IXYS IXGX40N60BD1 Datasheet
© 2001 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
CES
IC= 750 mA, VGE = 0 V 600 V
V
GE(th)
IC= 500 mA, VCE = V
GE
2.5 5.0 V
I
CES
VCE= 0.8 V
CES
TJ = 25°C 650 mA
VGE= 0 V TJ = 125°C 3 mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 1. 6 2.1 V
Pulse test, t < 300ms,duty cycle < 2%
HiPerFAST
TM
IGBT with Diode
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 600 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C75A
I
C110
TC= 110°C40A
I
CM
TC= 25°C, 1 ms 150 A
SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W ICM = 80 A
(RBSOA) Clamped inductive load @ 0.8 V
CES
P
C
TC= 25°C 250 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque, TO-264 1.13/10 Nm/lb.in.
Weight 5g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
G = Gate C = Collector
E = Emitter Tab = Collector
Features
International standard packages
JEDEC TO-268 and PLUS247 (holeless TO-247)
High frequency IGBT and antparallel
FRED in one package
New generation HDMOS
TM
process
High current handling capability
MOS Gate turn-on fordrive simplicity
Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I
RM
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Space savings (two devices on one
package
Easy to mount with 1 screw
98801 (01/01)
PLUS247
(IXGX)
V
CES
= 600 V
I
C25
= 75 A
V
CE(sat)
= 2.1 V
t
fi(typ)
= 180 ns
(TAB)
IXGX 40N60BD1
Advanced Technical Information
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
fs
IC= I
C90
; VCE = 10 V, 30 42 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
ies
3300 pF
C
oes
VCE= 25 V, VGE = 0 V, f = 1 MHz 370 pF
C
res
65 pF
Q
g
116 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
23 nC
Q
gc
65 nC
t
d(on)
25 ns
t
ri
30 ns
t
d(off)
180 300 n s
t
fi
180 270 n s
E
off
2.7 6.0 mJ
t
d(on)
25 ns
t
ri
30 ns
E
on
1.2 mJ
t
d(off)
300 ns
t
fi
270 ns
E
off
4.0 mJ
R
thJC
0.50 K/W
R
thCK
0.15 K/W
Inductive load, TJ = 2 5°C
I
C
= I
C90
, VGE = 15 V
VCE = 0.8 V
CES
, RG = R
off
= 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 V
CES
,
higher TJ or increased R
G
Inductive load, TJ = 125°C
IC = I
C90
, VGE = 1 5 V
V
CE
= 0.8 V
CES
, RG = R
off
= 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 V
CES
,
higher TJ or increased R
G
PLUS247 Outline
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
IF = I
C90
, VGE = 0 V, TJ = 150°C 1.3 V
Pulse test, t £ 300 ms, duty cycle d 22 % 1.8 V
I
RM
IF = I
C90
, VGE = 0 V, -diF/dt = 100 A/ms, 7.5 A
VR = 100 V
t
rr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V 35 n s
R
thJC
0.65 K/W
Dim . Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
IXGX 40N60BD1
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