IXYS IXGH 50N60B2, IXGT 50N60B2 Service Manual
查询IXGH50N60B2供应商
HiPerFASTTM IGBT
B2-Class High Speed IGBTs
IXGH 50N60B2
IXGT 50N60B2
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA V
(RBSOA) Clamped inductive load @
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C (limited by leads) 75 A
TC= 110°C50A
TC= 25°C, 1 ms 200 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 80 A
GE
≤ 600V
V
CES
I
C25
V
CE(sat)
t
fi typ
TO-247
(IXGH)
TO-268
(IXGT)
= 600 V
= 75 A
= 2.0 V
= 65 ns
G
C
E
G
E
C (TAB)
C (TAB)
P
C
T
J
T
JM
T
stg
TC= 25°C 400 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (TO-247) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
I
I
V
CES
GES
GE(th)
CE(sat)
IC = 250 µA, VCE = V
VCE= V
VGE= 0 V TJ = 150°C1mA
CES
GE
TJ = 25°C50µA
3.0 5.0 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC = 40 A, VGE = 15 V 1.6 2.0 V
TJ = 125°C 1.5 V
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
z
High frequency IGBT
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
Applications
z
PFC circuits
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
Advantages
z
High power density
z
Very fast switching speeds for high
frequency applications
© 2004 IXYS All rights reserved
DS99145A(03/04)
IXGH 50N60B2
IXGT 50N60B2
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
J
IC= 40 A; VCE = 10 V, 40 55 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz 240 pF
IC = 40 A, VGE = 15 V, VCE = 0.5 V
Inductive load, TJ = 25
°°
°C
°°
CES
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = R
Inductive load, TJ = 125
I
= 40 A, VGE = 15 V
C
VCE = 480 V, RG = R
= 5 Ω
off
= 5 Ω
off
°°
°C
°°
(TO-247) 0.25 K/W
min. typ. max.
3500 pF
50 pF
140 nC
23 nC
44 nC
18 ns
25 ns
190 300 n s
65 ns
0.55 0.85 mJ
18 ns
25 ns
0.45 mJ
290 ns
140 ns
1.55 mJ
0.31 K/W
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
2.2 2.6 .059 .098
A
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
∅ P
e
Min. Recommended Footprint
(Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
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