HiPerFASTTM IGBT
IXGH 50N60B
IXGK 50N60B
IXGT 50N60B
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
= 75 A
= 2.5 V
= 150 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C75A
TC= 90°C50A
TC= 25°C, 1 ms 200 A
= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A
GE
CES
TC= 25°C 300 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque TO-247AD 1.13/10 Nm/lb.in.
TO-264 0.9/6 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247 6 g
TO-264 10 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 250mA, VGE = 0 V 600 V
IC= 250 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C1mA
CES
GE
TJ = 25°C 200 mA
2.5 5.0 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.5 V
C90
© 2000 IXYS All rights reserved
TO-247 AD (IXGH)
G
C
E
TO-268 (D3) (IXGT)
G
TO-264 AA (IXGK)
G
C
E
G = Gate D = Drain
E = Emitter TAB = Collector
C (TAB)
E
C (TAB)
C (TAB)
Features
• International standard packages
• High frequency IGBT
• Latest generation HDMOSTM process
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(insulated mounting screw hole)
• Switching speed for high frequency
applications
• High power density
95585E (7/00)
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IXGH 50N60B IXGK 50N60B IXGT 50N60B
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
fs
iss
oss
rss
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %
; VCE = 10 V, 25 35 S
C90
4000 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 340 p F
100 pF
110 180 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
30 50 nC
40 100 nC
Inductive load, TJ = 25°C
IC = I
, VGE = 15 V
C90
VCE = 0.8 • V
, RG = R
CES
= 2.7 W
off
Remarks: Switching times may increase
for V
(Clamp) > 0.8 • V
CE
increased R
G
, higher TJ or
CES
Inductive load, TJ = 125°C
IC = I
, VGE = 15 V
C90
VCE = 0.8 • V
, RG = R
CES
= 2.7 W
off
Remarks: Switching times may increase
for V
(Clamp) > 0.8 • V
CE
increased R
G
, higher TJ or
CES
50 ns
50 ns
200 300 ns
150 270 ns
3.0 6.0 mJ
50 ns
50 ns
2mJ
280 ns
250 ns
4.2 mJ
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-264 AA (IXGK) Outline
R
thJC
R
thCK
TO-247 package 0.25 K/W
TO-264 package 0.15 K/W
TO-268AA (IXGT) (D3 PAK)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
1.9 2.1 .75 .83
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
13.3 13.6 .524 .535
E
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
0.62 K/W
Millimeter Inches
Dim.
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Min. Recommended Footprint
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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