IXYS IXGT40N60B, IXGT40N60BD1 Datasheet
© 2002 IXYS All rights reserved
V
CES
= 600 V
I
C25
=70 A
V
CE(sat)
= 2.1 V
t
fi(typ)
= 180 ns
HiPerFASTTM IGBT
ISOPLUS247
TM
(Electrically Isolated Backside)
ISOPLUS 247
G = Gate, C = Collector
E = Emitter
* Patent pending
E153432
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 600 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C 70 A
I
C90
TC= 90°C 35 A
I
CM
TC= 25°C, 1 ms 150 A
SSOA V
GE
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 80 A
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
CES
P
C
TC= 25°C 200 W
T
J
-40 ... +150 °C
T
JM
150 °C
T
stg
-40 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 5g
G
C
E Isolated Backside*
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
CES
IC= 250 µA, VGE = 0 V 40N60B 600 V
IC= 750 µA 40N60BD1 600
V
GE(th)
IC= 250 µA, VCE = V
GE
40N60B 2.5 5.0 V
IC= 500 µA 40N60BD1 2.5 5.0 V
I
CES
VCE= 0.8 V
CES
TJ = 25°C 40N60B 200 µA
VGE= 0 V; note 1 T
J
= 25°C 40N60BD1 650 µA
TJ = 125°C 40N60B 1 mA
TJ = 125°C 40N60BD1 3 mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= IT, VGE = 15 V 1.6 2.1 V
Features
l
DCB Isolated mounting tab
l
Meets TO-247AD package Outline
l
High current handling capability
l
Latest generation HDMOSTM process
l
MOS Gate turn-on
- drive simplicity
l
Low collector-to-drain capacitance
(<35pF)
Applications
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
Advantages
l
Easy assembly
l
High power density
IXGR 40N60B
IXGR 40N60BD1
(D1)
98800A (02/02)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXGR 40N60B
IXGR 40N60BD1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. ty p . max.
g
fs
IC= IT; VCE = 10 V, 30 42 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
3300 pF
40N60B 310 pF
C
oes
VCE = 25 V, V
GE
= 0 V, f = 1 MHz 40N60BD1 370 pF
C
res
65 pF
Q
g
116 nC
Q
ge
IC = IT, VGE = 15 V, VCE = 0.5 V
CES
23 nC
Q
gc
55 nC
t
d(on)
25 ns
t
ri
30 ns
t
d(off)
180 300 ns
t
fi
180 270 ns
E
off
2.7 4.0 mJ
t
d(on)
25 ns
t
ri
30 ns
E
on
40N60B 0.4 mJ
t
d(off)
40N60BD1 1.2 mJ
t
fi
300 ns
270 ns
E
off
4.0 mJ
R
thJC
0.6 K/W
R
thCK
0.15 K/W
Inductive load, TJ = 25
°°
°°
°C
IC = IT, VGE = 15 V
VCE = 0.8 V
CES
, RG = R
off
= 4.7 Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher TJ or
increased R
G
Inductive load, TJ = 125
°°
°°
°C
IC = IT, VGE = 15 V
V
CE
= 0.8 V
CES
, RG = R
off
= 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 V
CES
,
higher TJ or increased R
G
ISOPLUS 247 OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Reverse Diode (FRED) (IXGR40N60BD1) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
VFIF = IT, VGE = 0 V, TJ = 150°C 1.3 V
Note 1 1.8 V
I
RMIF
= IT, VGE = 0 V, VR = 100 V TJ = 100°C,-di/dt = 100 A/µs 7.5 A
t
rrIF
= 1 A; -di/dt = 100 A/µs; VR = 30 V 35 ns
R
thJC
0.90 K/W
Note: 1. Pulse test, tp ≤ 300 ms, duty cycle:d ≤ 2 %
2. IT = 40A
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