IXYS IXGH 16N170A, IXGT 16N170A Service Manual
查询IXGH14N170A供应商
Advance Technical Data
High Voltage
IXGH 16N170A
IXGT 16N170A
IGBT
Symbol Test Conditions Maximum Ratings
T
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load @ 0.8 V
t
SC
P
C
T
J
T
JM
T
stg
M
d
Maximum lead temperature for soldering 30 0 °C
1.6 mm (0.062 in.) from case for 10 s
Weight TO-247 6 g
= 25°C to 150°C 1700 V
J
T
= 25°C to 150°C; RGE = 1 MΩ 1700 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C16A
C
T
= 90°C8A
C
T
= 25°C, 1 ms 40 A
C
= 15 V, T
GE
= 125°C, RG = 10Ω I
VJ
= 40 A
CM
CES
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω 10 µs
T
= 25°C 190 W
C
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in.
TO-268 4 g
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700 V
= 16 A
= 5.0 V
= 40 ns
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL 94 V-0
flammability classification
C (TAB)
C (TAB)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2003 IXYS All rights reserved
I
= 250 µA, V
C
I
= 250 µA, V
C
VCE= 0.8 • V
= 0 V Note 1 T
V
GE
VCE= 0 V, V
IC= I
, VGE = 15 V T
C90
J
= 0 V 1700 V
GE
= V
CE
GE
T
CES
= ±20 V ±100 nA
GE
= 25°C50µA
J
= 125°C 750 µA
J
= 25°C 4.0 5.0 V
J
T
= 125°C 4.8 V
J
min. typ. max.
3.0 5.0 V
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98993(01/03)
IXGH 16N170A
IXGT 16N170A
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
J
IC= I
Note 2
; VCE = 10 V 6 10 S
C25
VCE = 25 V, VGE = 0 V, f = 1 MHz 83 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, T
I
= I
, VGE = 15 V
C
C25
R
= 10 Ω, V
G
Note 3
= 0.8 V
CE
Inductive load, T
I
= I
, VGE = 15 V
C
C25
= 10 Ω, V
R
G
Note 3
= 0.8 V
CE
= 25
J
= 125
J
CES
CES
°°
°C
°°
°°
°C
°°
CES
(TO-247) 0.25 K/W
min. typ. max.
1700 pF
30 pF
65 nC
13 nC
24 nC
36 ns
57 ns
200 350 ns
40 150 ns
0.9 1.5 mJ
38 ns
59 ns
1.5 mJ
200 ns
55 ns
1.1 mJ
0.65 K/W
TO-247 AD Outline
e
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
2.2 2.6 .059 .098
A
2
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
2.87 3.12 .113 .123
b
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
∅ P
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for V
increased R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
.
G
(Clamp) > 0.8 • V
CE
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
, higher TJ or
CES
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A
.02 .25 .001 .010
2
b 1.15 1.45 .045 .057
1.9 2.1 .75 .83
b
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
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