IXYS IXGR 60N60C2, IXGR 60N60C2D1 Service Manual

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HiPerFASTTM IGBT

TM

Series

TM

ISOPLUS247

Lightspeed 2

IXGR 60N60C2
IXGR 60N60C2D1

(Electrically Isolated Back Surface)

V
I
V
t

Preliminary Data Sheet

IXGR_C2 IXGR_C2D1

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C110

I

F110

I

CM

SSOA V

(RBSOA) Clamped inductive load @ V

P

C

T

J

T

JM

T

stg

V

ISOL

TJ= 25°C to 150°C 600 V

TJ= 25°C to 150°C; RGE = 1 MΩ 600 V

Continuous ±20 V

Transient ±30 V

TC= 25°C (limited by leads) 75 A

TC= 110°C 48 A

TC= 110°C (IXGR60N60C2D1) 39 A

TC= 25°C, 1 ms 300 A

= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A

GE

≤ 600 V

CE

TC= 25°C 250 W

-55 ... +150 °C

150 °C

-55 ... +150 °C

50/60 Hz RMS, t = 1m 2500 V

Weight 5g

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

ISOPLUS247
(IXGR)

G = Gate C = Collector
E = Emitter

Features

z

z

z

z

z

Applications

z

z

z

z

z

Advantages

CES

C25

CE(sat)

fi(typ)

= 600 V
= 75 A
= 2.7 V
= 35 ns

C

E

(ISOLATED TAB)

DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on

- drive simplicity

Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

Min. Typ. Max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

© 2004 IXYS All rights reserved

IC= 1 mA, VGE = 0 V 600 V
IC= 250 µA, VCE = V

VCE= V
VGE= 0 V GR60N60C2D1 650 µA

CES

GE

GR60N60C2 50 µA

3.0 5.0 V

VCE= 0 V, VGE = ±20 V ±100 nA

IC= 50 A, VGE = 15 V TJ = 25°C 2.3 2.7 V
Note 1 TJ = 125°C 2.0 V

z

Easy assembly

z

High power density

z

Very fast switching speeds for high
frequency applications

DS99051D(05/04)

IXGR 60N60C2
IXGR 60N60C2D1

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

J

g

fs

C

ies

C

oes

IC= 50 A; VCE = 10 V, 40 55 S
Note 1

VCE= 25 V, VGE = 0 V, f = 1 MHz 60N60C2 280 pF

Min. Typ. Max.

3900 pF

60N60C2D1 320 pF

C

Q

Q

Q

t

d(on)

t

ri

t

d(off)

t

fi

E

t

d(on)

t

ri

E
t

d(off)

t

fi

E

R
R
R

res

g

ge

gc

off

on

off

thJ-DCB

thJC

thCS

IC = 50 A, VGE = 15 V, VCE = 0.5 V

CES

Inductive load, TJ = 25°C

I

= 50 A, VGE = 15 V

C

VCE = 400 V, RG = R

= 2.0 Ω

off

Inductive load, TJ = 125°C

IC = 50 A, VGE = 15 V

= 400 V, RG = R

V

CE

= 2.0 Ω

off

(Note 2) 0.25 K/W
(Note 3) 0.50 K/W

0.15 K/W

97 pF

140 nC

28 nC

35 nC

18 ns

25 ns

95 150 ns

35 ns

0.49 0.8 mJ

18 ns
25 ns

1.6 mJ

130 ns

80 ns

0.92 mJ

ISOPLUS 247 Outline

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

RM

t

rr

R

thJC

IF = 60 A, VGE = 0 V, 2.0 V
Note 1 TJ = 150°C 1.39

IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C 8.3 A
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 ns

0.85 K/W

Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
2: R

3: R

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344

is the thermal resistance junction-to-internal side of DCB substrate

thJ-DCB

is the thermal resistance junction-to-external side of DCB substrate

thJC