IXYS IXGR50N60BD1, IXGR50N60B Datasheet
HiPerFASTTM IGBT
ISOPLUS247
TM
IXGR 50N60B
IXGR 50N60BD1
(Electrically Isolated Back Surface)
Preliminary data sheet
(D1)
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering 30 0 °C
1.6 mm (0.062 in.) from case for 10 s
V
ISOL
Weight 5g
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 75 A
TC= 110°C 45 A
TC= 25°C, 1 ms 200 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A
GE
CES
TC= 25°C 250 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
50/60 Hz, RMS, t = 1minute leads-to-tab 2500 V
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
=75 A
= 2.3 V
=85ns
ISOPLUS 247
E153432
G
C
E Isolated Backside*
G = Gate, C = Collector
E = Emitter
* Patent pending
Features
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
V
I
CES
CES
GE(th)
IC= 250 µA, VGE = 0 V 50N60B 600 V
IC= 1 m A 50N60BD1 600 V
IC= 250 µA, VCE = V
IC= 500 µA 50N60BD1 2.5 5.0 V
VCE= V
VGE= 0 V 50N60BD1 650 µA
CES
GE
50N60B 2.5 5.0 V
50N60B 200 µA
50N60B T
= 125°C 1 mA
J
50N60BD1 5 mA
I
GES
V
CE(sat)
© 2000 IXYS All rights reserved
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.3 V
C90
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
98730 (07/00)
IXGR 50N60B
IXGR 50N60BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. ty p . max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= IT; VCE = 10 V, 25 35 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
4000 pF
50N60B 280 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 50N60BD1 340 pF
100 pF
110 nC
IC = IT, VGE = 15 V, VCE = 0.5 V
CES
30 nC
35 nC
Inductive load, TJ = 25
°°
°C
°°
IC = IT, VGE = 15 V
VCE = 0.8 • V
CES
, RG = R
= 2.7 Ω
off
Remarks: Switching times may increase
for V
(Clamp) > 0.8 • V
CE
increased R
G
Inductive load, TJ = 125
I
= IT, VGE = 15 V
C
VCE = 0.8 • V
CES
, RG = R
, higher TJ or
CES
°°
°C
°°
= 2.7 Ω
off
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
G
, higher TJ or
CES
50 ns
50 ns
200 ns
85 150 ns
2.5 mJ
50 ns
60 ns
3mJ
200 ns
175 ns
2.5 mJ
0.5 K/W
0.15 K/W
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
IF = I
Pulse test, t ≤ 300 ms, duty cycle ≤ 2 %
IF = I
VR = 100 V 175 ns
, VGE = 0 V, 2.5 V
C90
, VGE = 0 V, -diF/dt = 100 A/ms 2 2.5 A
C90
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 50 ns
0.85 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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