IXYS IXGR40N60CD1, IXGR40N60C Datasheet
Advanced Technical Information
HiPerFASTTM IGBT
ISOPLUS247
TM
IXGR 40N60C
IXGR 40N60CD1
(Electrically Isolated Backside)
(D1)
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA V
(RBSOA) Clamped inductive load @ 0.8 V
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight 5g
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 75 A
TC= 110°C 35 A
TC= 25°C, 1 ms 150 A
= 15 V, TVJ = 125°C, RG = 10 W ICM = 80 A
GE
CES
TC= 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque (M3) 1.13/10Nm/lb.in.
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
=75 A
= 2.5 V
=75ns
ISOPLUS 247
E153432
G
C
E Isolated Backside*
G = Gate, C = Collector
E = Emitter
* Patent pending
Features
l
DCB Isolated mounting tab
l
Meets TO-247AD package Outline
l
High current handling capability
l
Latest generation HDMOSTM process
l
MOS Gate turn-on
- drive simplicity
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2001 IXYS All rights reserved
IC= 250 mA, VGE = 0 V 40N60C 600 V
IC= 750 mA 40N60CD1 600
IC= 250 mA, VCE = V
IC= 500 mA 40N60CD1 2.5 5.0 V
V
= 0.8 • V
CE
VGE= 0 V; note 1 T
CES
GE
TJ = 25°C 40N60C 200 mA
= 25°C 40N60CD1 650 mA
J
TJ = 125°C 40N60C 1 mA
TJ = 125°C 40N60CD1 3 mA
40N60C 2.5 5.0 V
VCE= 0 V, VGE = ±20 V ±100 nA
I
= IT, V
C
= 1 5 V 2 .5 V
GE
Applications
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
Advantages
l
Easy assembly
l
High power density
l
Very fast switching speeds for high
frequency applications
98803 (01/01)
IXGR 40N60C
IXGR 40N60CD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= IT; VCE = 10 V, 30 40 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
3300 pF
40N60C 310 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 40N60CD1 370 p F
65 pF
116 nC
IC = IT, VGE = 15 V, VCE = 0.5 V
CES
23 nC
55 nC
Inductive load, TJ = 25°C
IC = IT, VGE = 15 V
V
= 0.8 • V
CE
, RG = R
CES
= 4.7 W
off
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
G
, higher TJ or
CES
25 ns
30 ns
100 150 ns
75 150 ns
0.85 1.70 mJ
25 ns
Inductive load, TJ = 125°C
I
= IT, VGE = 15 V
C
VCE = 0.8 • V
, RG = R
CES
40N60C 0.4 mJ
= 4.7 W
40N60CD1 1.2 mJ
off
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 • V
increased R
G
, higher TJ or
CES
35 ns
150 ns
105 ns
1.2 mJ
0.6 K/ W
0.15 K/W
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
Reverse Diode (FRED) (IXGH40N60CD1 only) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
Note: 1. Pulse test, t
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
I
= I
, VGE = 0 V, TJ = 150°C 1.3 V
F
T
Note 1 TJ = 25°C 1.8 V
I
= I
, VGE = 0 V , VR = 100 V TJ = 100°C 7.5 A
F
T
-diF/dt = 100 A/ms
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V 3.5 n s
£ 300 ms, duty cycle:d £ 2 %
2. IT = 40A
p
0.90 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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