IXYS IXGR39N60B, IXGR39N60BD1 Datasheet
© 2000 IXYS All rights reserved
98738 (07/00)
V
CES
= 600 V
I
C25
=66 A
V
CE(sat)
= 1.8 V
t
fi(typ)
= 200 ns
HiPerFASTTM IGBT
ISOPLUS247
TM
(Electrically Isolated Backside)
Preliminary data sheet
ISOPLUS 247
G = Gate, C = Collector
E = Emitter
* Patent pending
E153432
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 600 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C 66 A
I
C110
TC= 110°C 35 A
I
CM
TC= 25°C, 1 ms 152 A
SSOA V
GE
= 15 V, TVJ = 125°C, RG = 10 W ICM = 76 A
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V
CES
P
C
TC= 25°C 140 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3) 1.13/10Nm/lb.in.
Weight 5g
G
C
E Isolated Backside*
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
CES
IC= 250 mA, VGE = 0 V 39N60B 600 V
IC= 750 mA 39N60BD1 600
V
GE(th)
IC= 250 mA, VCE = V
GE
39N60B 2.5 5.0 V
IC= 500 mA 39N60BD1 2.5 5.0 V
I
CES
VCE= 0.8 V
CES
TJ = 25°C 39N60B 200 mA
VGE= 0 V; note 1 T
J
= 25°C 39N60BD1 650 mA
TJ = 125°C 39N60B 1 mA
TJ = 125°C 39N60BD1 3 mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= IT, VGE = 15 V 1.8 V
Features
l
DCB Isolated mounting tab
l
Meets TO-247AD package Outline
l
High current handling capability
l
Latest generation HDMOSTM process
l
MOS Gate turn-on
- drive simplicity
Applications
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
Advantages
l
Easy assembly
l
High power density
l
Very fast switching speeds for high
frequency applications
IXGR 39N60B
IXGR 39N60BD1
(D1)
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 39N60B
IXGR 39N60BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= IT; VCE = 10 V, 19 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
ies
2750 pF
39N60B 200 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 39N60BD1 250 pF
C
res
50 pF
Q
g
125 nC
Q
ge
IC = IT, VGE = 15 V, VCE = 0.5 V
CES
25 nC
Q
gc
40 nC
t
d(on)
25 ns
t
ri
30 ns
t
d(off)
250 500 n s
t
fi
200 360 n s
E
off
4.0 6.0 mJ
t
d(on)
25 ns
t
ri
30 ns
E
on
39N60B 0.3 mJ
t
d(off)
39N60BD1 1.0 m J
t
fi
360 ns
350 ns
E
off
6.0 mJ
R
thJC
0.9 K/W
R
thCK
0.15 K/W
Inductive load, TJ = 2 5°C
IC = IT, VGE = 15 V
V
CE
= 0.8 V
CES
, RG = R
off
= 4.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 V
CES
, higher TJ or
increased R
G
Inductive load, TJ = 1 25°C
I
C
= IT, VGE = 15 V
VCE = 0.8 V
CES
, RG = R
off
= 4.7 W
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 V
CES
, higher TJ or
increased R
G
ISOPLUS 247 OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Reverse Diode (FRED) (IXGH39N60BD1 only) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
IF = 30A, VGE = 0 V , TJ = 150°C 1.6 V
Note 1 2.5 V
I
RM
IF = 50A, VGE = 0 V, VR = 100 V TJ = 100°C 2.5 A
-diF/dt = 100 A/ms 175 ns
t
rr
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V 25 n s
R
thJC
0.85 K/W
Note: 1. Pulse test, tp £ 300 ms, duty cycle:d £ 2 %
2. IT = 39A
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