IXYS IXGR32N60CD1 Datasheet

HiPerFASTTM IGBT
with Diode
ISOPLUS247

(Electrically Isolated Backside)

TM

IXGR 32N60CD1

V

CES

I

C25

V

CE(SAT)typ

t

fi(typ)

= 600 V

= 45 A

= 2.1 V
= 55 ns

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V

P

C

T

J

T

JM

T

stg

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C45A
TC= 90°C28A
TC= 25°C, 1 ms 120 A

= 15 V, TVJ = 125°C, RG = 10 W ICM = 64 A

GE

CES

TC= 25°C 140 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Maximum Lead and Tab temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

V

ISOL

50/60 Hz, RMS t = 1 min leads-to housing 2500 V~

Weight 5g

ISOPLUS 247

G = Gate, C = Collector,
E = Emitter, TAB = Collector

* Patent pending

Features

• DCB Isolated mounting tab

• Meets TO-247AD package Outline

• High current handling capability

• Latest generation HDMOSTM process

• MOS Gate turn-on

- drive simplicity

E 153432

G

TM

(IXGR)

C

E

Isolated backside*

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 250mA, VGE = 0 V 600 V
IC= 250 mA, VCE = V

VCE= 0.8 • V
VGE= 0 V TJ = 125°C3mA

CES

GE

TJ = 25°C 200 mA

2.5 5.0 V

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

Note 1

= 15 V 2.1 2.5 V

T, VGE

© 2000 IXYS All rights reserved

Applications

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode
power supplies

• AC motor speed control

• DC servo and robot drives

• DC choppers

Advantages

• Easy assembly

• High power density

• Very fast switching speeds for high
frequency applications

98631B (7/00)

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IXGR 32N60CD1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C
C
C

Q
Q
Q

t

d(on)

t
t

d(off)

t
E

t

d(on)

t
E
t

d(off)

t
E

R
R

fs

ies

oes

res

g

ge

gc

ri

fi

off

ri

on

fi

off

thJC

thCK

IC = IT; VCE = 10 V, 25 S
Pulse test, t £ 300 ms, duty cycle £ 2 %

2700 pF

VCE = 25 V, VGE = 0 V, f = 1 MHz 2 40 pF

50 pF

110 nC

IC = IT, VGE = 15 V, VCE = 0.5 V

CES

22 nC
40 nC

Inductive load, TJ = 25°C

IC = IT, VGE = 15 V, L = 100 mH,
VCE = 0.8 V

, RG = R

CES

= 4.7 W

off

Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R

G

Inductive load, TJ = 125°C

I

= IT, VGE = 15 V, L = 100 mH

C

VCE = 0.8 V

, RG = R

CES

= 4.7 W

off

Remarks: Switching times may
increase for V
higher TJ or increased R

(Clamp) > 0.8 • V

CE

G

CES

CES

,

,

25 ns
20 ns
85 ns
55 ns

0.32 mJ
25 ns

25 ns

1mJ
110 170 ns
100 160 ns

0.85 1.25 mJ

0.90 K/W

0.15 K/W

ISOPLUS 247 (IXGR) OUTLINE

1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205
A

2.29 2.54 .090 .100

1

A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055

b

1.91 2.13 .075 .084

1

b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190

S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.
V

F

I

RM

t

rr

R

thJC

IF= IT, VGE = 0 V, Pulse test TJ = 150°C 1.6 V
t £ 300 ms, duty cycle d £ 2 % TJ = 25°C 2.5 V

IF= IT, VGE = 0 V, -diF/dt = 100 A/ms6A
VR= 100 V TJ = 100°C 100 ns
IF= 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C25 ns

1.15 K/W

Note: 1. IT = 32A

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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