HiPerFASTTM IGBT
with Diode
ISOPLUS247
(Electrically Isolated Backside)
TM
IXGR 32N60CD1
V
CES
I
C25
V
CE(SAT)typ
t
fi(typ)
= 600 V
= 45 A
= 2.1 V
= 55 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V
P
C
T
J
T
JM
T
stg
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C45A
TC= 90°C28A
TC= 25°C, 1 ms 120 A
= 15 V, TVJ = 125°C, RG = 10 W ICM = 64 A
GE
CES
TC= 25°C 140 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum Lead and Tab temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
V
ISOL
50/60 Hz, RMS t = 1 min leads-to housing 2500 V~
Weight 5g
ISOPLUS 247
G = Gate, C = Collector,
E = Emitter, TAB = Collector
* Patent pending
Features
• DCB Isolated mounting tab
• Meets TO-247AD package Outline
• High current handling capability
• Latest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
E 153432
G
TM
(IXGR)
C
E
Isolated backside*
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 250mA, VGE = 0 V 600 V
IC= 250 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C3mA
CES
GE
TJ = 25°C 200 mA
2.5 5.0 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
Note 1
= 15 V 2.1 2.5 V
T, VGE
© 2000 IXYS All rights reserved
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• Easy assembly
• High power density
• Very fast switching speeds for high
frequency applications
98631B (7/00)
1 - 5
IXGR 32N60CD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
d(on)
t
t
d(off)
t
E
t
d(on)
t
E
t
d(off)
t
E
R
R
fs
ies
oes
res
g
ge
gc
ri
fi
off
ri
on
fi
off
thJC
thCK
IC = IT; VCE = 10 V, 25 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
2700 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 2 40 pF
50 pF
110 nC
IC = IT, VGE = 15 V, VCE = 0.5 V
CES
22 nC
40 nC
Inductive load, TJ = 25°C
IC = IT, VGE = 15 V, L = 100 mH,
VCE = 0.8 V
, RG = R
CES
= 4.7 W
off
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
G
Inductive load, TJ = 125°C
I
= IT, VGE = 15 V, L = 100 mH
C
VCE = 0.8 V
, RG = R
CES
= 4.7 W
off
Remarks: Switching times may
increase for V
higher TJ or increased R
(Clamp) > 0.8 • V
CE
G
CES
CES
,
,
25 ns
20 ns
85 ns
55 ns
0.32 mJ
25 ns
25 ns
1mJ
110 170 ns
100 160 ns
0.85 1.25 mJ
0.90 K/W
0.15 K/W
ISOPLUS 247 (IXGR) OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
2.29 2.54 .090 .100
1
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1.91 2.13 .075 .084
1
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF= IT, VGE = 0 V, Pulse test TJ = 150°C 1.6 V
t £ 300 ms, duty cycle d £ 2 % TJ = 25°C 2.5 V
IF= IT, VGE = 0 V, -diF/dt = 100 A/ms6A
VR= 100 V TJ = 100°C 100 ns
IF= 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C25 ns
1.15 K/W
Note: 1. IT = 32A
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2 - 5
IXGR 32N60CD1
100
TJ = 25°C
VGE = 15V
13V
11V
80
60
40
- Amperes
C
I
20
0
012345
VCE - Volts
Fig. 1. Output Characteristics
100
TJ = 125°C
80
60
40
- Amperes
C
I
20
0
012345
VGE = 15V
13V
VCE - Volts
11V
7V
9V
5V
5V
7V
9V
200
160
TJ = 25°C
VGE = 15V
13V
120
80
- Amperes
C
I
40
0
0246810
VCE - Volts
Fig. 2. Extended Output Characteristics
1.50
VGE = 15V
1.25
1.00
- Normalized
CE (sat)
0.75
V
0.50
25 50 75 100 125 150
TJ - Degrees C
I
= 64A
C
= 32A
I
C
IC = 16A
11V
9V
7V
5V
Fig. 3. High Temperature Output Characteristics
100
V
= 10V
CE
80
60
40
- Amperes
C
I
T
= 125°C
J
20
0
345678910
V
Fig. 5. Admittance Curves
© 2000 IXYS All rights reserved
TJ = 25°C
- Volts
Capacitance - pF
Fig. 4. Temperature Dependence of V
10000
C
iss
1000
C
oss
100
C
rss
10
0 5 10 15 20 25 30 35 40
VCE-Volts
Fig. 6. Capacitance Curves
CE(sat)
f = 1Mhz
3 - 5
IXGR 32N60CD1
1.00
TJ = 125°C
RG = 10
E
(OFF)
0.75
E
(ON)
0.50
- millijoules
(ON)
E
0.25
0.00
0 20406080
IC - Amperes
Fig. 7. Dependence of EON and E
on IC. Fig. 8. Dependence of EON and E
OFF
16
= 32A
I
C
V
= 300V
CE
12
8
- Volts
GE
V
4
4
E
(OFF)
3
- milliJoules
2
1
0
4
TJ = 125°C
3
E
(ON)
IC = 64A
2
- millijoules
E
(ON)
(ON)
E
1
E
(ON)
IC = 32A
= 16A
I
C
0
0 102030405060
8
E
6
(OFF)
E
(OFF)
- millijoules
4
E
(OFF)
2
E
(OFF)
0
RG - Ohms
on RG.
OFF
100
64
10
- Amperes
C
I
1
TJ = 125°C
RG = 4.7
dV/dt < 5V/ns
0
0 25 50 75 100 125
Qg - nanocoulombs
Fig. 9. Gate Charge
0.1
0 100 200 300 400 500 600
VCE - Volts
Fig. 10. Turn-off Safe Operating Area
1
D=0.5
D=0.2
0.1
D=0.1
D=0.05
(K/W)
D=0.02
thJC
D=0.01
Z
0.01
Single pulse
D = Duty Cycle
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Sec on ds
Fig. 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4 - 5
IXGR 32N60CD1
60
A
50
I
F
40
TVJ=150°C
30
TVJ=100°C
20
TVJ=25°C
10
0
0123
V
V
F
Fig. 12. Forward current IF versus V
2.0
1.5
K
f
1.0
I
RM
0.5
Q
r
1000
TVJ= 100°C
nC
VR = 300V
800
Q
r
600
IF= 60A
IF= 30A
IF= 15A
400
200
0
100 1000
Fig. 13. Reverse recovery charge Q
F
versus -diF/dt
90
ns
t
rr
80
70
IF= 60A
IF= 30A
IF= 15A
A/ms
-diF/dt
TVJ= 100°C
VR = 300V
30
TVJ= 100°C
A
VR = 300V
25
I
RM
20
IF= 60A
IF= 30A
IF= 15A
15
10
5
0
200 600 10000 400 800
r
Fig. 14.Peak reverse current I
versus -diF/dt
20
TVJ= 100°C
IF = 30A
V
V
FR
V
15
t
fr
10
5
A/ms
/dt
-di
F
RM
1.00
µs
t
FR
fr
0.75
0.50
0.25
0.0
0 40 80 120 160
T
VJ
Fig. 15. Dynamic parameters Qr, I
versus T
VJ
°C
RM
60
200 600 10000 400 800
/dt
-di
F
Fig. 16.Recovery time trr versus -diF/dt
10
K/W
1
Z
thJC
0.1
0.01
0.001
0.0001
0.00001 0.0001 0.001 0.01 0.1 1
t
Fig. 18. Transient thermal resistance junction to case
A/ms
DSEP 2x31-06B
s
0
0 200 400 600 800 1000
A/ms
0.00
diF/dt
Fig. 17.Peak forward voltage VFR and t
versus diF/dt
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.436 0.0055
2 0.482 0.0092
3 0.117 0.0007
4 0.115 0.0418
fr
© 2000 IXYS All rights reserved
5 - 5
Loading...