IXYS IXGR32N60C Datasheet

1 - 4

© 2000 IXYS All rights reserved

Symbol Test Conditions Maximum Ratings
V

CES

TJ= 25°C to 150°C 600 V

V

CGR

TJ= 25°C to 150°C; RGE = 1 MW 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

TC= 25°C45A

I

C110

TC= 110°C26A

I

CM

TC= 25°C, 1 ms 120 A

SSOA V

GE

= 15 V, TVJ = 125°C, RG = 10 W ICM = 64 A

(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V

CES

P

C

TC= 25°C 140 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

V

ISOL

50/60 Hz, RMS, t = 1minute leads-to-tab 2500 V

Weight 6g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

IC= 250 mA, VGE = 0 V 600 V

V

GE(th)

IC= 250 mA, VCE = V

GE

2.5 5 V

I

CES

VCE= 0.8 • V

CES

TJ = 25°C 200 mA

VGE= 0 V TJ = 150°C1mA

I

GES

VCE= 0 V, VGE = ±20 V ±100 nA

V

CE(sat)

IC= IT, VGE = 15 V (see note 1) 2.1 2.5 V

98651A (7/00)

IXGR 32N60C V

CE

= 600 V

I

C25

= 45 A

V

CE(sat)typ

= 2.1 V

t

fi typ

= 55 ns

HiPerFASTTM IGBT
Lightspeed Series
ISOPLUS247TM package

(Electrically Isolated Back Side)

G = Gate, C = Collector,
E = Emitter

*Patent pending

ISOPLUS 247

TM

E153432

G

C

E

Isolated Backside*

Features

• DCB Isolated mounting tab

• Meets TO-247AD package Outline

• High current handling capability

• Latest generation HDMOS

TM

process

• MOS Gate turn-on

- drive simplicity

Applications

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode
power supplies

• AC motor speed control

• DC servo and robot drives

• DC choppers

Advantages

• Easy assembly

• High power density

• Very fast switching speeds for high
frequency applications

IXYS reserves the right to change limits, test conditions, and dimensions.

2 - 4

© 2000 IXYS All rights reserved

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

fs

IC= IT; VCE = 10 V, 25 S
Pulse test, t £ 300 ms, duty cycle £ 2 %

C

ies

2700 pF

C

oes

VCE = 25 V, VGE = 0 V, f = 1 MHz 1 90 pF

C

res

50 pF

Q

g

110 nC

Q

ge

IC = IT, VGE = 15 V, VCE = 0.5 V

CES

22 nC

Q

gc

40 nC

t

d(on)

25 ns

t

ri

20 ns

t

d(off)

85 ns

t

fi

55 ns

E

off

0.32 mJ

t

d(on)

25 ns

t

ri

25 ns

E

on

0.30 mJ

t

d(off)

110 170 ns

t

fi

105 160 ns

E

off

0.85 1.25 mJ

R

thJC

0.90 K/W

R

thCK

0.15 K/W

Inductive load, TJ = 25°C

IC = IT, VGE = 15 V, L = 100 mH,
VCE = 0.8 V

CES

, RG = R

off

= 4.7 W

Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V

CES

,

higher TJ or increased R

G

Inductive load, TJ = 150°C

IC = IT, VGE = 15 V, L = 100 mH
V

CE

= 0.8 V

CES

, RG = R

off

= 4.7 W

Remarks: Switching times may
increase for V

CE

(Clamp) > 0.8 • V

CES

,

higher TJ or increased R

G

IXGR 32N60C

Note 1: IT = 32A

ISOPLUS 247 (IXGR) OUTLINE

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205
A

1

2.29 2.54 .090 .100

A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055

b

1

1.91 2.13 .075 .084

b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190

S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
U 1.65 3.03 .065 .080

1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025