IXYS IXGR12N60C Datasheet
© 2002 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
T
J
= 25°C to 150°C 600 V
V
CGR
T
J
= 25°C to 150°C; RGE = 1 MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
T
C
= 25°C15A
I
C90
T
C
= 90°C8A
I
CM
T
C
= 25°C, 1 ms 48 A
SSOA V
GE
= 15 V, T
VJ
= 125°C, RG = 33 Ω I
CM
= 24 A
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
CES
P
C
T
C
= 25°C55W
T
J
-40 ... +150 °C
T
JM
150 °C
T
stg
-40 ... +150 °C
V
ISOL
Isolation Voltage 2500 V
Weight 5g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
98663B (02/02)
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
BV
CES
I
C
= 250 µA, V
GE
= 0 V 600 V
V
GE(th)
I
C
= 250 µA, V
GE
= V
GE
2.5 5.0 V
I
CES
VCE= 0.8 V
CES
T
J
= 25°C 200 µA
VGE= 0 V T
J
= 125°C 1.5 mA
I
GES
VCE= 0 V, V
GE
= ±20 V ±100 nA
V
CE(sat)
IC= IT, VGE = 15 V 2.7 V
V
CES
= 600 V
I
C25
=15 A
V
CE(sat)
= 2.7 V
t
fi(typ)
=55 ns
HiPerFASTTM IGBT
ISOPLUS247
TM
(Electrically Isolated Back Surface)
G = Gate C = Drain
E = Source
* Patent pending
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low collector to tab capacitance
(<35pF)
l
3rd generation HDMOSTM process
V
CE (sat)
l
Rugged polysilicon gate cell structure
Applications
l
PFC circuits
l
AC motor control
l
Switched-mode and resonant-mode
power supplies, UPS, no screws, or
isolation foils
l
DC choppers
Advantages
l
Easy assembly
l
Low capacitance to ground, low EMI
IXGR 12N60C
ISOPLUS 247
E153432
G
C
E Isolated Backside*
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= IT; VCE = 10 V, 7 11 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
860 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 64 pF
C
res
15 pF
Q
g
32 nC
Q
ge
IC = IT, VGE = 15 V, VCE = 0.5 V
CES
10 nC
Q
gc
10 nC
t
d(on)
20 ns
t
ri
20 ns
t
d(off)
60 ns
t
fi
55 ns
E
off
0.09 mJ
t
d(on)
20 ns
t
ri
20 ns
E
on
0.15 mJ
t
d(off)
85 180 ns
t
fi
85 180 ns
E
off
0.27 0.60 mJ
R
thJC
2.27 K/W
R
thCK
0.15 K/W
Inductive load, TJ = 25
°°
°°
°C
I
C
= IT, V
GE
= 15 V, L = 300 µH
VCE = 0.8 V
CES
, RG = R
off
= 18 Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 V
CES
, higher TJ or
increased R
G
Inductive load, TJ = 125
°°
°°
°C
IC = IT, V
GE
= 15 V, L = 300 µH
V
CE
= 0.8 V
CES
, RG = R
off
= 18 Ω
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 V
CES
, higher TJ or
increased R
G
IXGR 12N60C
ISOPLUS 247 OUTLINE
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A
1
2.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b
1
1.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Note: IT = 12A
Loading...