IXYS IXGP7N60B, IXGA7N60B Datasheet
HiPerFASTTM IGBT IXGA 7N60B
IXGP 7N60B
V
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 14 A
= 2 V
= 150 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; R
= 1 MΩ 600 V
GE
Continuous ±20 V
Transient ±30 V
TC= 25°C 14 A
TC= 90°C 7 A
TC= 25°C, 1 ms 30 A
= 15 V, TVJ = 125°C, R
GE
= 22 Ω I
G
= 14 A
CM
CES
TC= 25°C 54 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum lead temperature for soldering 300 ° C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, (TO-220) Μ3 0.45/4 Nm/lb.in.
Μ3.5 0.55/5
Weight TO-220 4 g
TO-263 2 g
TO-220AB (IXGP)
G
C
E
TO-263 AA (IXGA)
G
E
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
• International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
• Medium frequency IGBT
• High current handling capability
• HiPerFAST
TM
HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2002 IXYS All rights reserved
I
= 250 µA, V
C
I
= 250 µA, V
C
VCE= 0.8 V
VGE= 0 V T
= 0 V 600 V
GE
CES
= V
CE
GE
T
= 25°C 100 µA
J
= 125°C 500 µA
J
2.5 5.5 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 1.8 2.0 V
C90
Applications
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• AC motor speed control
• DC servo and robot drives
• DC choppers
Advantages
• High power density
• Suitable for surface mounting
• Very low switching losses for high
frequency applications
98563A (06/02)
IXGA 7N60B
IXGP 7N60B
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
on
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 3 7 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 50 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
Inductive load, TJ = 25°C
I
= I
, V
C
VCE = 0.8 V
= 15 V, L = 300 µH,
C90
GE
, RG = R
CES
= 22 Ω
off
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 V
higher TJ or increased R
G
Inductive load, TJ = 125°C
I
= I
, V
C
VCE = 0.8 V
= 15 V, L = 300 µH
C90
GE
, RG = R
CES
= 22 Ω
off
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 V
higher TJ or increased R
G
(TO-220) 0.25 K/W
min. typ. max.
500 pF
0.07 mJ
100 200 ns
CES
,
150 250 ns
0.15 mJ
200 ns
CES
,
250 ns
17 pF
25 nC
5nC
10 nC
9ns
10 ns
0.3 0.6 m J
10 ns
15 ns
0.6 mJ
2.3 K/W
TO-220 AB Outline
Pins: 1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Min. Recommended Footprint
(Dimensions in inches and mm)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 B SC .100 B SC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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