IXYS IXGP12N60U1 Service Manual
查询IXGP12N60U1供应商
Preliminary data
Low V
CE(sat)
IXGP12N60U1
IGBT with Diode
Combi Pack
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
Weight 4g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C24A
TC= 90°C12A
TC= 25°C, 1 ms 48 A
= 15 V, TVJ = 125°C, RG = 150 Ω ICM = 20 A
GE
CES
TC= 25°C 100 W
-55 ... +150 °C
Features
l
150 °C
-55 ... +150 °C
Mounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
l
l
l
l
l
V
CES
I
C
V
CE(sat)
= 600 V
= 24 A
= 2.5 V
TO-220 AB
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
International standard package
JEDEC TO-220 AB
IGBT with antiparallel FRED in one
package
2nd generation HDMOSTM process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode FRED)
- soft recovery with low I
RM
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1996 IXYS All rights reserved 92792D (9/96)
IC= 750 µA, VGE = 0 V 600 V
IC= 250 µA, VGE = V
VCE= 0.8 • V
= 0 V TJ = 125°C 2.5 mA
V
GE
CES
GE
TJ = 25°C 250 µ A
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.5 V
CE90
min. typ. max.
2.5 5.5 V
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Easy to mount with 1 screw
l
Space savings (two devices in one
package)
l
Reduces assembly time and cost
l
High power density
IXGP12N60U1
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
J
g
fs
IC= I
; VCE = 10 V, 4 8 S
C90
min. typ. max.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
VCE = 25 V, VGE = 0 V, f = 1 MHz 125 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
I
= I
, VGE = 15 V, L = 100 µH
C
C90
= 0.8 • V
V
CE
, RG = R
CES
°°
°C
°°
= 150 Ω
off
CES
Remarks: Switching times may increase
(Clamp) > 0.8 • V
for V
CE
increased R
G
Inductive load, TJ = 125
= I
, VGE = 15 V, L = 100 µH
I
C
C90
V
= 0.8 • V
CE
, RG = R
CES
, higher TJ or
CES
°°
°C
°°
= 150 Ω
off
Remarks: Switching times may increase
(Clamp) > 0.8 • V
for V
CE
increased R
G
, higher TJ or
CES
750 pF
30 pF
50 70 nC
15 25 nC
25 45 nC
100 ns
200 ns
500 700 ns
300 500 ns
1.2 2.0 mJ
100 ns
200 ns
1mJ
600 800 ns
400 700 ns
2mJ
1.25 K/W
0.25 K/W
TO-220 AB Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 14.93 0.500 0.580
B 14.23 16.50 0.560 0.650
C 9.66 10.66 0.380 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.29 2.79 0.090 0.110
G 1.15 1.77 0.045 0.070
H 2.79 6.35 0.110 0.250
J 0.64 0.89 0.025 0.035
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 0.64 1.39 0.025 0.055
Q 0.51 0.76 0.020 0.030
R 2.04 2.49 0.080 0.115
Reverse Diode (FRED) Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IF = I
V
F
, VGE = 0 V, 1.75 V
C90
J
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
RM
t
rr
IF = I
, VGE = 0 V, -diF/dt = 64 A/µs 2.5 A
C90
VR = 360 V TJ =100 °C 150 ns
IF = 1 A; -di/dt = 50 A/µs; VR = 30 V TJ =25°C35 50ns
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
2.5 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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