IXYS IXGP12N60CD1, IXGA12N60CD1 Datasheet
HiPerFASTTM IGBT
Lightspeed
TM
Series
IXGA 12N60CD1
IXGP 12N60CD1
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 600 V
= 24 A
= 2.7 V
= 55 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
T
= 25°C to 150°C 600 V
J
T
= 25°C to 150°C; RGE = 1 MΩ 600 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C24A
C
T
= 90°C12A
C
T
= 25°C, 1 ms 48 A
C
GE
T
= 25°C 100 W
C
= 15 V, T
= 125°C, RG = 33 Ω I
VJ
= 24 A
CM
CES
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
TO-263 (IXGA)
TO-220 AB
(IXGP)
G = Gate C = Collector
E = Emitter TAB = Collector
Features
Weight 4g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
•Very high frequency IGBT
•New generation HDMOS
•International standard package
•High peak current handling capability
G
E
G
C
E
C (TAB)
TM
process
JEDEC TO-220AB and TO-263AA
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2002 IXYS All rights reserved
I
= 250 µA, V
C
I
= 250 µA, V
C
VCE= 0.8 V
VGE= 0 V T
VCE= 0 V, V
IC= I
, VGE = 15 V 2.1 2.7 V
CE90
J
= 0 V 600 V
GE
= V
GE
GE
T
CES
= ±20 V ±100 nA
GE
= 25°C 200 µA
J
= 125°C 1.5 mA
J
min. typ. max.
2.5 5.0 V
Applications
• PFC circuit
• AC motor speed control
• DC servo and robot drives
• Switch-mode and resonant-mode
power supplies
• High power audio amplifiers
Advantages
• Fast switching speed
• High power density
98513C (2/02)
IXGA 12N60CD1
IXGP 12N60CD1
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 5 11 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 100 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
= I
, V
I
C
V
= 0.8 V
CE
= 15 V, L = 300 µH
C90
GE
, RG = R
CES
°°
°C
°°
off
CES
= 18 Ω
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 V
increased R
G
Inductive load, TJ = 125
IC = I
, V
= 15 V, L = 300 µH
C90
GE
VCE = 0.8 V
, RG = R
CES
, higher TJ or
CES
°°
°C
°°
= 18 Ω
off
Remarks: Switching times may increase for
VCE (Clamp) > 0.8 V
increased R
G
, higher TJ or
CES
IGBT 1.25 K/W
min. typ. max.
860 pF
15 pF
32 nC
10 nC
10 nC
20 ns
20 ns
60 ns
55 ns
0.09 mJ
20 ns
20 ns
0.5 mJ
85 180 ns
85 180 ns
0.27 0.60 mJ
0.25 K/W
TO-220 AB (IXGP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2. 54 BSC 0 .1 00 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
TO-263 AA (IXGA) Outline
Reverse Diode (FRED) Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
IF = 15A; T
= 150°C 1.7 V
VJ
VR = 100 V; IF =25A; -di
L < 0.05 µH; TVJ = 100°C
I
= 1 A; -di/dt = 50 A/µs;
F
VR = 30 V T
= 25°C35ns
J
Diode 1.6 K/W
J
T
= 25°C 2.5 V
VJ
/dt = 100 A/µs 2 2.5 A
F
Min. Recommended Footprint
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
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