IXYS IXGP12N60B, IXGA12N60B Datasheet
HiPerFASTTM IGBT
IXGA 12N60B V
CES
= 600 V
IXGP 12N60B I
V
t
Preliminary data sheet
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
T
= 25°C to 150°C 600 V
J
T
= 25°C to 150°C; RGE = 1 MΩ 600 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C24A
C
T
= 90°C12A
C
T
= 25°C, 1 ms 48 A
C
= 15 V, T
GE
T
= 25°C 100 W
C
= 125°C, RG = 33 Ω I
VJ
= 24 A
CM
CES
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 4g
TO-220 AB (IXGP)
TO-263 AA (IXGA)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
l
l
l
l
C25
CE(sat)
fi(typ)
= 24 A
= 2.1 V
= 120 ns
G
E
G
E
C (TAB)
C (TAB)
Moderate frequency IGBT and antiparallel FRED in one package
New generation HDMOSTM process
International standard package
JEDEC TO-220AB and TO-263AA
High peak current handling capability
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2002 IXYS All rights reserved
I
= 250 µA, V
C
I
= 250 µA, V
C
VCE= 0.8 V
VGE= 0 V T
VCE= 0 V, V
IC= I
GE
, VGE = 15 V 2. 1 V
CE90
J
= 0 V 600 V
GE
= V
GE
GE
T
CES
= 25°C 100 µA
J
= 125°C1mA
J
= ±20 V ±100 nA
min. typ. max.
2.5 5.0 V
Applications
l
PFC circuit
l
AC motor speed control
l
DC servo and robot drives
l
Switch-mode and resonant-mode
power supplies
98909 (2/02)
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
min. typ. max.
IXGA 12N60B
IXGP 12N60B
TO-220 AB Outline
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 5 11 S
C90
860 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 100 pF
15 pF
32 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
10 nC
10 nC
Inductive load, TJ = 25
I
= I
, V
C
= 0.8 V
V
CE
= 15 V, L = 300 µH
C90
GE
CES
, RG = R
°°
°C
°°
= 18 Ω
off
Remarks: Switching times may increase
for V
(Clamp) > 0.8 V
CE
increased R
G
Inductive load, TJ = 125
I
= I
, V
C
VCE = 0.8 V
= 15 V, L = 300 µH
C90
GE
CES
, RG = R
, higher TJ or
CES
°°
°C
°°
= 18 Ω
off
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 V
increased R
G
, higher TJ or
CES
20 ns
20 ns
150 250 ns
120 270 ns
0.5 0.8 mJ
20 ns
20 ns
0.15 mJ
200 ns
200 ns
0.8 mJ
1.25 K/W
0.25 K/W
Pins: 1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
TO-263 AA Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
R 0.46 0.74 .018 .029
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