IXYS IXGN 50N60BD2, IXGN 50N60BD3 Service Manual

查询IXGN50N60BD2供应商
HiPerFASTTM IGBT with HiPerFRED
Buck & boost configurations
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
IGBT
I
C90
I
CM
SSOA VGE= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A (RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
P
C
V
RRM
I
FAVM
I
Diode
FRM
P
D
T
J
T
JM
T
stg
M
d
Case
Weight 30 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ = 25°C to 150°C 600 V TJ = 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V Transient ±30 V
TC = 25°C75A TC = 90°C50A TC = 25°C, 1 ms 200 A
TC = 25°C 250 W
TC = 70°C; rectangular, d = 50% 60 A tP z<10 ms; pulse width limited by TJ 600 A TC = 25°C 150 W
Mounting torque 1.5/13 Nm/lb.in. Terminal connection torque (M4) 1.5/13 Nm/lb.in.
IXGN 50N60BD2 IXGN 50N60BD3
...BD2 ...BD3
CES
600 V
-40 ... +150 °C 150 °C
-40 ... +150 °C
V
CES
I
C25
V
t
fi
= 600 V = 75 A = 2.5 V = 150 ns
SOT-227B, miniBLOC
E 153432
IXGN50N60BD2
1 = Emitter; 2 = Gate 3 = Collector; 4 = Diode cathode
IXGN50N60BD3
1 = Emitter/Diode Cathode; 2 = Gate 3 = Collector; 4 = Diode anode
1
2
3
Features
• International standard package miniBLOC
• Aluminium nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching IGBT & FRED diode
• MOS Gate turn-on
- drive simplicity
• Low collector-to-case capacitance
• Low package inductance (< 10 nH)
- easy to drive and to protect
• Molding epoxies meet UL 94 V-0 flammability classification
4
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 250 mA, VGE = 0 V 600 V IC= 250 mA, VCE = V
VCE= 0.8 • V VGE= 0 V TJ = 125°C1mA
CES
GE
TJ = 25°C 200 mA
2.5 5 V
VCE= 0 V, VGE = ±20 V ±100 nA IC= I
, VGE = 15 V 2.5 V
C90
© 2000 IXYS All rights reserved
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Buck converters
Advantages
• Easy to mount with 2 screws
• Space savings
• High power density
98502C (8/99)
1 - 5
IXGN 50N60BD2 IXGN 50N60BD3
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C C C
Q Q Q
t t t t E
t t E t t E
R R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= I Pulse test, t £ 300 ms, duty cycle £ 2 %
; VCE = 10 V, 35 50 S
C90
4100 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 290 pF
50 pF
110 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
30 nC 35 nC
Inductive load, TJ = 25°C
IC = I
, VGE = 15 V, L = 100 mH,
C90
VCE = 0.8 V
, RG = R
CES
= 2.7 W
off
Remarks: Switching times may increase for VCE (Clamp) > 0.8 • V increased R
G
, higher TJ or
CES
Inductive load, TJ = 125°C
IC = I
, VGE = 15 V, L = 100 mH
C90
V
= 0.8 V
CE
, RG = R
CES
= 2.7 W
off
Remarks: Switching times may increase for VCE (Clamp) > 0.8 • V increased R
G
, higher TJ or
CES
50 ns
50 ns 110 250 ns 150 220 ns
3.0 4.0 mJ 50 ns
60 ns
3.0 mJ
200 ns 250 ns
4.2 mJ
0.50 K/W
0.05 K/W
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193 H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004
Reverse Diode (FRED) Characteristic Values
= 25°C, unless otherwise specified)
(T
J
Symbol Test Conditions typ. max. I
R
TVJ = 25°C VR= V
RRM
650 uA
TVJ = 150°C 2.5 mA
V
F
I
RM
IF= 60 A, TVJ = 150°C 1.75 V Pulse test, t £ 300 ms, duty cycle d £ 2 % T
IF= I
, VGE = 0 V, -diF/dt = 100 A/ms 8.0 A
C90
= 25°C 2.40 V
VJ
VR= 540 V
t
rr
R
thJC
© 2000 IXYS All rights reserved
IF= 1 A, -di/dt = 50 A/ms, VR = 30 V TJ = 25°C35 ns
0.85 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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