IXYS IXGN32N60BU1 Datasheet
1 - 6
© 2000 IXYS All rights reserved
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
G
C
E
TO-247 AD
95567B (7/00)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 750 mA, VGE = 0 V 600 V
V
GE(th)
IC= 250 mA, VCE = V
GE
2.5 5.5 V
I
CES
VCE= 0.8 • V
CES
TJ = 25°C 500 mA
VGE= 0 V TJ = 125°C8mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 2.5 V
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 600 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C60A
I
C90
TC= 90°C32A
I
CM
TC= 25°C, 1 ms 120 A
SSOA V
GE
= 15 V, TVJ = 125°C, RG = 33 W ICM = 64 A
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V
CES
P
C
TC= 25°C 200 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
Maximum Lead and Tab temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
IXGH32N60BU1 V
CES
= 600 V
I
C25
= 60 A
V
CE(sat)
= 2.5V
t
fi
= 80 ns
HiPerFASTTM IGBT
with Diode
Features
• International standard package
JEDEC TO-247 AD
• High frequency IGBT and antiparallel
FRED in one package
• High current handling capability
• Newest generation HDMOSTM process
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• High power density
• Very fast switching speeds for high
frequency applications
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 6
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
C90
; VCE = 10 V, 15 20 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
ies
2500 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 270 pF
C
res
70 pF
Q
g
125 150 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
23 35 nC
Q
gc
50 75 nC
t
d(on)
25 ns
t
ri
30 ns
t
d(off)
100 200 ns
t
fi
80 150 ns
E
off
0.8 1.6 mJ
t
d(on)
25 ns
t
ri
35 ns
E
on
1mJ
t
d(off)
120 ns
t
fi
120 ns
E
off
1.4 mJ
R
thJC
0.62 K/W
R
thCK
0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
IF = I
C90
, VGE = 0 V, 1.6 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
I
RM
IF = I
C90
, VGE = 0 V, -diF/dt = 240 A/ms1015A
t
rr
VR = 360 V TJ = 125°C 150 ns
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ =25°C35 50ns
R
thJC
1K/W
Inductive load, TJ = 25°C
IC = I
C90
, VGE = 15 V, L = 100 mH,
VCE = 0.8 V
CES
, RG = R
off
= 4.7 W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher TJ or increased R
G
Inductive load, TJ = 125°C
IC = I
C90
, VGE = 15 V, L = 100 mH
VCE = 0.8 V
CES
, RG = R
off
= 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
CES
,
higher TJ or increased R
G
IXGH32N60BU1
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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