IXYS IXGN200N60N Datasheet
1 - 2
© 2000 IXYS All rights reserved
SOT-227B, miniBLOC
Features
• International standard package
miniBLOC
• Aluminium nitride isolation
- high power dissipation
• Isolation voltage 3000 V~
• Very high current, fast switching IGBT
• Low V
CE(sat)
- for minimum on-state conduction
losses
• MOS Gate turn-on
- drive simplicity
• Low collector-to-case capacitance
(< 50 pF)
• Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 2 screws
• Space savings
• High power density
E
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
G
E
E
C
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 600 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C 200 A
I
C90
TC= 90°C 120 A
I
CM
TC= 25°C, 1 ms 400 A
SSOA V
GE
= 15 V, TVJ = 125°C, RG = 2.4 W ICM = 200 A
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
CES
P
C
TC= 25°C 600 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
V
ISOL
50/60 Hz t = 1 min 2500 V~
I
ISOL
£ 1 mA t = 1 s 3000 V~
M
d
Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.
Weight 30 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 1 mA , VGE = 0 V 600 V
V
GE(th)
IC= 1 mA, VCE = V
GE
2.5 5.5 V
I
CES
VCE= V
CES
TJ = 25°C 200 mA
VGE= 0 V TJ = 125°C2mA
I
GES
VCE= 0 V, VGE = ±20 V ±400 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 2.1 V
98606 (5/99)
HiPerFASTTM IGBT
IXGN 200N60B V
CES
= 600 V
I
C25
= 200 A
V
CE(sat)
= 2.1 V
Advanced T echnical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= 60 A; VCE = 10 V, 50 75 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
ies
11000 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 68 0 pF
C
res
190 pF
Q
g
350 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
72 nC
Q
gc
131 nC
t
d(on)
60 ns
t
ri
45 ns
E
on
2.4 mJ
t
d(off)
200 360 ns
160 280 ns
t
ri
5.5 9.6 mJ
E
off
t
d(on)
60 ns
t
ri
60 ns
E
on
4.8 mJ
t
d(off)
290 ns
t
ri
250 ns
E
off
8.7 mJ
R
thJC
0.21 K/W
R
thCK
0.05 K/W
Inductive load, TJ = 25°C
IC = 100A, VGE = 15 V
VCE = 0.8 V
CES
, RG = R
off
= 2.4 W
Remarks: Switching times
may increase for
V
CE
(Clamp) > 0.8 • V
CES
,
higher TJ or increased R
G
Inductive load, TJ = 125°C
IC =100A, VGE = 15 V
V
CE
= 0.8 V
CES
, RG = R
off
= 2.4 W
Remarks: Switching times
may increase for VCE (Clamp) > 0.8 • V
CES
,
higher TJ or increased R
G
IXGN 200N60B
M4 screws (4x) supplied
Dim. Millimeter Inches
Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 38.00 38.23 1.496 1.505
J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
O 1.98 2.13 0.078 0.084
P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
miniBLOC, SOT-227 B
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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