IXYS IXGH25N100A, IXGM25N100A, IXGM25N100, IXGH25N100 Datasheet

V

CES

I

C25

V

CE(sat)

Low V

CE(sat)

High speed IGBT IXGH/IXGM

IXGH/IXGM 25 N100 1000 V 50 A 3.5 V

25 N100A 1000 V 50 A 4.0 V

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V

P

C

T

J

T

JM

T

stg

M

d

TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGE = 1 MΩ 1000 V

Continuous ±20 V
Transient ±30 V

TC= 25°C50A
TC= 90°C25A
TC= 25°C, 1 ms 100 A

= 15 V, TVJ = 125°C, RG = 33 Ω ICM = 50 A

GE

CES

TC= 25°C 200 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque (M3) 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IC= 3 mA, VGE = 0 V 1000 V

IC= 250 µA, VCE = V

VCE= 0.8 • V

V

= 0 V TJ = 125°C1mA

GE

VCE= 0 V, VGE = ±20 V ±100 nA

IC= I

J

GE

CES

, VGE = 15 V 25N100 3.5 V

C90

TJ = 25°C 250 µA

25N100A 4.0 V

min. typ. max.

2.5 5 V

TO-247 AD (IXGH)

G

C

E

TO-204 AE (IXGM)

C

G = Gate, C = Collector,
E = Emitter, TAB = Collector

Features

l

International standard packages

l

2nd generation HDMOSTM process

l

Low V

CE(sat)

- for low on-state conduction losses

l

High current handling capability

l

MOS Gate turn-on

- drive simplicity

l

Voltage rating guaranteed at high
temperature (125°C)

Applications

l

AC motor speed control

l

DC servo and robot drives

l

DC choppers

l

Uninterruptible power supplies (UPS)

l

Switch-mode and resonant-mode
power supplies

Advantages

l

Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)

l

High power density

© 1996 IXYS All rights reserved

91516E (3/96)

IXGH 25N100 IXGM 25N100
IXGH 25N100A IXGM 25N100A

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

g

C
C
C

Q
Q
Q

t
t
t
t
E

t
t
E
t
t

E

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

J

IC= I
Pulse test, t ≤ 300 µ s, duty cycle ≤ 2 %

; VCE = 10 V, 8 15 S

C90

VCE = 25 V, VGE = 0 V, f = 1 MHz 200 pF

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

Inductive load, TJ = 25

= I

, VGE = 15 V, L = 300 µH,

I

C

C90

V

= 0.8 V

CE

Remarks: Switching times

, RG = R

CES

°°

°C

°°

= 33 Ω

off

may increase
for V

(Clamp) > 0.8 • V

CE

higher T

or increased R

J

Inductive load, TJ = 125

= I

, VGE = 15 V, L = 300 µH

I

C

C90

V

= 0.8 V

CE

, RG = R

CES

CES

G

°°

°C

°°

= 33 Ω

off

,

Remarks: Switching times
may increase

(Clamp) > 0.8 • V

for V

CE

higher T

or increased R

J

G

CES

,

min. typ. max.

2750 pF

50 pF

130 180 nC

CES

25 60 nC
55 90 nC

100 ns
200 ns

500 ns
25N100A 500 ns
25N100A 5 mJ

100 ns

250 ns

3.5 mJ

720 1000 ns
25N100 950 3000 ns

25N100A 800 1500 ns
25N100 10 mJ

25N100A 8 mJ

TO-247 AD Outline

1 = Gate
2 = Collector
3 = Emitter
Tab = Collector

R

thJC

R

thCK

0.25 K/W

0.62 K/W

TO-204AE Outline

1 = Gate
2 = Emitter
Case = Collector

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025