IXYS IXGK 50N50BU1, IXGK 50N60BU1 Service Manual

查询IXGK50N50BU1供应商
HiPerFAST IGBT with Diode
TM
IXGK 50N50BU1 IXGK 50N60BU1
Combi Pack
Preliminary data
Symbol Test Conditions Maximum Ratings
50N50 50N60
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V (RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
Weight 10 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 500 600 V TJ= 25°C to 150°C; RGE = 1 MW 500 600 V
Continuous ±20 ±20 V Transient ±30 ±30 V
TC= 25°C7575A TC= 90°C5050A TC= 25°C, 1 ms 200 200 A
= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A
GE
CES
TC= 25°C 300 300 W
-55 ... +150 °C 150 °C
-55 ... +150 °C
Mounting torque (M4) 0.9/6 Nm/lb.in.
CES
I
C25
V
CE(sat)
t
fi
500 V 75 A 2.3 V 100ns 600 V 75 A 2.5 V 120ns
TO-264 AA
G
C
E
G = Gate, C = Collector, E = Emitter, TAB = Collector
Features
International standard package JEDEC TO-264 AA
High frequency IGBT and anti­parallel FRED in one package
2nd generation HDMOSTM process
Low V
CE(sat)
- for minimum on-state conduction losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 500 mA, VGE = 0 V 50N50 500 V
50N60 600 V
IC= 500 mA, VCE = V VCE= 0.8 • V
VGE= 0 V TJ = 125°C15mA
CES
GE
TJ = 25°C 250 mA
2.5 5.5 V
VCE= 0 V, VGE = ±20 V ±100 nA IC= I
, VGE = 15 V 50N50BU1 2.3 V
C90
50N60BU1 2.5 V
© 2000 IXYS All rights reserved
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode power supplies
Advantages
Space savings (two devices in one package)
Easy to mount with 1 screw (isolated mounting screw hole)
Reduces assembly time and cost
High power density
97510A(1/98)
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IXGK50N50BU1 IXGK50N60BU1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I Pulse test, t £ 300 ms, duty cycle £ 2 %
; VCE = 10 V, 25 3 5 S
C90
Remarks: Add capacitance from IXGH50N60B (DS95585B)
Q Q Q
t t t t
E
t t E t t
E
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
Inductive load, TJ = 25°C
IC = I
, VGE = 15 V, L = 100 mH,
C90
VCE = 0.8 V
, RG = R
CES
= 2.7 W
off
Remarks: Switching times may increase for VCE (Clamp) > 0.8 • V increased R
Inductive load, T
I
= I
C
VCE = 0.8 V
G
= 125°C
J
, VGE = 15 V, L = 100 mH
C90
, RG = R
CES
, higher TJ or
CES
= 2.7 W
off
Remarks: Switching times may increase for VCE (Clamp) > 0.8 • V increased R
G
, higher TJ or
CES
50N50 80 150 ns 50N60 150 ns 50N50 1.8 mJ 50N60 3.0 mJ
50N50 100 ns 50N60 250 50N50 2.6 mJ 50N60 4.2 mJ
200 nC
50 nC 70 nC
50 ns 50 ns
110 ns
50 ns 60 ns
3mJ
200 ns
TO-264 AA Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072
R
thJC
R
thCK
0.15 K/W
0.42 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = I
, VGE = 0 V, 1.7 V
C90
Pulse test, t £ 300 ms, duty cycle d £ 2 % IF = I
, VGE = 0 V, -diF/dt = 480 A/ms1933A
C90
VR = 360 V TJ = 125°C 175 ns IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C3550ns
0.75 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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