查询IXGK50N50BU1供应商
HiPerFAST
IGBT with Diode
TM
IXGK 50N50BU1
IXGK 50N60BU1
Combi Pack
Preliminary data
Symbol Test Conditions Maximum Ratings
50N50 50N60
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
Weight 10 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 500 600 V
TJ= 25°C to 150°C; RGE = 1 MW 500 600 V
Continuous ±20 ±20 V
Transient ±30 ±30 V
TC= 25°C7575A
TC= 90°C5050A
TC= 25°C, 1 ms 200 200 A
= 15 V, TVJ = 125°C, RG = 10 W ICM = 100 A
GE
CES
TC= 25°C 300 300 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque (M4) 0.9/6 Nm/lb.in.
V
CES
I
C25
V
CE(sat)
t
fi
500 V 75 A 2.3 V 100ns
600 V 75 A 2.5 V 120ns
TO-264 AA
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
●
International standard package
JEDEC TO-264 AA
●
High frequency IGBT and antiparallel FRED in one package
●
2nd generation HDMOSTM process
●
Low V
CE(sat)
- for minimum on-state conduction
losses
●
MOS Gate turn-on
- drive simplicity
●
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 500 mA, VGE = 0 V 50N50 500 V
50N60 600 V
IC= 500 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C15mA
CES
GE
TJ = 25°C 250 mA
2.5 5.5 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 50N50BU1 2.3 V
C90
50N60BU1 2.5 V
© 2000 IXYS All rights reserved
Applications
●
AC motor speed control
●
DC servo and robot drives
●
DC choppers
●
Uninterruptible power supplies (UPS)
●
Switch-mode and resonant-mode
power supplies
Advantages
●
Space savings (two devices in one
package)
●
Easy to mount with 1 screw
(isolated mounting screw hole)
●
Reduces assembly time and cost
●
High power density
97510A(1/98)
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IXGK50N50BU1 IXGK50N60BU1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %
; VCE = 10 V, 25 3 5 S
C90
Remarks: Add capacitance from
IXGH50N60B (DS95585B)
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
Inductive load, TJ = 25°C
IC = I
, VGE = 15 V, L = 100 mH,
C90
VCE = 0.8 V
, RG = R
CES
= 2.7 W
off
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
Inductive load, T
I
= I
C
VCE = 0.8 V
G
= 125°C
J
, VGE = 15 V, L = 100 mH
C90
, RG = R
CES
, higher TJ or
CES
= 2.7 W
off
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
G
, higher TJ or
CES
50N50 80 150 ns
50N60 150 ns
50N50 1.8 mJ
50N60 3.0 mJ
50N50 100 ns
50N60 250
50N50 2.6 mJ
50N60 4.2 mJ
200 nC
50 nC
70 nC
50 ns
50 ns
110 ns
50 ns
60 ns
3mJ
200 ns
TO-264 AA Outline
Dim.
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
R
thJC
R
thCK
0.15 K/W
0.42 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = I
, VGE = 0 V, 1.7 V
C90
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = I
, VGE = 0 V, -diF/dt = 480 A/ms1933A
C90
VR = 360 V TJ = 125°C 175 ns
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C3550ns
0.75 K/W
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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