IXYS IXGK 50N60AU1 Service Manual
查询IXGK50N60AU1供应商
HiPerFAST
TM
IXGK 50N60AU1 V
IGBT with Diode I
Combi Pack t
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
Weight 10 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C, limited by leads 75 A
TC= 90°C50A
TC= 25°C, 1 ms 200 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A
GE
CES
TC= 25°C 300 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque (M4) 0.9/6 Nm/lb.in.
CES
C25
V
CE(sat)
fi
= 600 V
= 75 A
= 2.7 V
= 275 ns
TO-264 AA
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
l
International standard package
JEDEC TO-264 AA
l
High frequency IGBT and antiparallel FRED in one package
l
2nd generation HDMOSTM process
l
Low V
CE(sat)
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1997 IXYS All rights reserved
IC= 500 µA, VGE = 0 V 600 V
IC= 500 µA, VCE = V
VCE= 0.8 • V
V
= 0 V TJ = 125°C15mA
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.7 V
C90
CES
J
GE
TJ = 25°C 250 µA
min. typ. max.
2.5 5.5 V
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Reduces assembly time and cost
l
High power density
92821G (3/97)
IXGK 50N60AU1
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
fs
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC = I
Inductive load, TJ = 25
= I
I
C
V
CE
; VCE = 10 V, 25 35 S
C90
, VGE = 15 V, VCE = 0.5 V
C90
, VGE = 15 V, L = 100 µH,
C90
= 0.8 V
, RG = R
CES
off
°°
°C
°°
= 2.7 Ω
CES
Remarks: Switching times may increase
(Clamp) > 0.8 • V
for V
CE
increased R
G
Inductive load, T
I
= I
, VGE = 15 V, L = 100 µH
C
C90
V
CE
= 0.8 V
, RG = R
CES
= 125
J
, higher TJ or
CES
°°
°C
°°
= 2.7 Ω
off
Remarks: Switching times may increase
(Clamp) > 0.8 • V
for V
CE
increased R
G
, higher TJ or
CES
min. typ. max.
200 nC
50 nC
80 nC
50 ns
210 ns
200 ns
275 400 ns
4.8 mJ
50 ns
240 ns
3mJ
280 ns
600 ns
9.6 mJ
0.42 K/W
0.15 K/W
TO-264 AA Outline
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IF = I
V
F
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
, VGE = 0 V, 1.7 V
C90
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, VGE = 0 V, -diF/dt = 480 A/µs1933A
C90
VR = 360 V TJ =125 °C 175 ns
I
= 1 A; -di/dt = 200 A/µs; VR = 30 V TJ =25°C35 50ns
F
0.75 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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