IXYS IXGJ 50N60B Service Manual

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HiPerFASTTM IGBT

IXGH 50N60B

IXGK 50N60B

IXGT 50N60B

IXGJ 50N60B

Symbol Test Conditions Maximum Ratings
V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load @ 0.8 V

P

C

T

J

T

JM

T

stg

M

d

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

Weight TO-247 6 g

Symbol Test Conditions Characteristic Values

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C75A
TC= 90°C50A
TC= 25°C, 1 ms 20 0 A

= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A

GE

CES

TC= 25°C 300 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque TO-247AD 1.13/10 Nm/lb.in.

TO-264 0.9/6 Nm/lb.in.

TO-264 10 g
TO-268 4 g

(T

= 25°C, unless otherwise specified)

I

= 250µA, V

C

I

= 250 µA, V

C

VCE= 0.8 • V
VGE= 0 V T

VCE= 0 V, V

IC= I

, VGE = 15 V 2.3 V

C90

= 0 V 600 V

GE

= V

CE

GE

CES

= ±20 V ±100 nA

GE

J

T

= 25°C 200 µA

J

= 125°C1mA

J

Min. Typ. Max.

2.5 5.0 V

V

CES

I

C25

V

CE(sat)

t

fi(typ)

TO-247 AD (IXGH)

TO-268 (D3) ( IXGT)

TO-268 Leaded (IXGJ)

TO-264 AA (IXGK)

G = Gate D = Drain
E = Emitter TAB = Collector

= 600 V
= 75 A

= 2.3

= 120 ns

C

E

G

E

G

C

E

G

C

E

V

C (TAB)

(TAB)

C (TAB)

C (TAB)

Features

• International standard packages

• High frequency IGBT

• Latest generation HDMOSTM process

• High current handling capability

• MOS Gate turn-on

- drive simplicity

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switch-mode and resonant-mode
power supplies

Advantages

• Easy to mount with 1 screw
(insulated mounting screw hole)

• Switching speed for high frequency
applications

• High power density

© 2002 IXYS All rights reserved

95585F(12/02)

IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g

C
C
C

Q
Q
Q

t
t
t
t
E

t
t
E
t
t
E

fs

ies

oes

res

G

GE

GC

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

J

IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

; VCE = 10 V, 25 42 S

C90

VCE = 25 V, VGE = 0 V, f = 1 MHz 31 0 p F

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

Inductive load, TJ = 25

I

= I

, VGE = 15 V

C

C90

VCE = 0.8 • V

, RG = R

CES

°°

°C

°°

off

CES

= 2.7 Ω

Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R

G

Inductive load, TJ = 125

IC = I

, VGE = 15 V

C90

V

= 0.8 • V

CE

, RG = R

CES

, higher TJ or

CES

°°

°C

°°

= 2.7 Ω

off

Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R

G

, higher TJ or

CES

min. typ. max.

4100 pF

95 pF

160 nC

30 nC
55 nC

50 ns

50 ns
150 250 ns
120 250 ns

3.0 4.5 mJ
50 ns

50 ns

3mJ
200 ns
250 ns

4.2 m J

TO-247 AD (IXGH) Outline

1 2 3

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

A

2.2 2.6 .059 .098

2

b 1.0 1.4 .040 .055
b

1.65 2.13 .065 .084

1

2.87 3.12 .113 .123

b

2

C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

TO-264 AA (IXGK) Outline

Terminals:
1 -Gate
2 -Collector
3 -Emitter
Tab-Collector

R

thJC

R

thCK

TO-247 & TO-268 leaded packages 0.25 K/W
TO-264 package 0.15 K/W

TO-268 (IXGT) Outline

Terminals:
1 - Gate
2 ­Collector

0.42 K/W

TO-268 (IXGJ) Leaded Outline

Millimeter Inches

Dim.

Min. Max. Min. Max.

A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025