HiPerFASTTM IGBT
Surface Mountable
IXGH50N60A
IXGH50N60AS
Symbol Test Conditions Maximum Ratings
V
CES
I
C25
V
CE(sat)
t
fi
TO-247 SMD
(50N60AS)
= 600 V
= 75 A
= 2.7 V
= 275 ns
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C75A
TC= 90°C50A
TC= 25°C, 1 ms 200 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 100 A
GE
CES
TC= 25°C 250 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum Lead and Tab temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.
Weight TO-247 SMD 4 g
TO-247 AD 6 g
G
E
TO-247 AD
(50N60A)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l
High frequency IGBT
l
High current handling capability
l
2nd generation HDMOSTM process
l
MOS Gate turn-on
- drive simplicity
C (TAB)
C (TAB)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1996 IXYS All rights reserved
IC= 250 µA, VGE = 0 V 600 V
IC= 250 µA, VCE = V
VCE= 0.8 • V
V
= 0 V TJ = 125°C1mA
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.7 V
C90
CES
J
GE
TJ = 25°C 200 µ A
min. typ. max.
2.5 5 V
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
High power density
l
Suitable for surface mounting
l
Switching speed for high frequency
applications
l
Easy to mount with 1 screw, TO-247
(insulated mounting screw hole)
92797H(9/96)
IXGH50N60A IXGH50N60AS
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 25 35 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 430 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
I
= I
, VGE = 15 V, L = 30 µH,
C
C90
V
= 0.8 V
CE
, RG = R
CES
°°
°C
°°
= 2.7 Ω
off
Remarks: Switching times may increase
for V
(Clamp) > 0.8 • V
CE
T
or increased R
J
G
Inductive load, TJ = 125
= I
, VGE = 15 V, L = 30 µH
I
C
C90
V
= 0.8 V
CE
, RG = R
CES
CES
°°
°C
°°
= 2.7 Ω
off
, higher
Remarks: Switching times may increase
(Clamp) > 0.8 • V
for V
CE
higher T
or increased R
J
G
CES
,
min. typ. max.
CES
4000 pF
100 pF
200 250 nC
35 50 nC
80 100 nC
50 ns
210 ns
200 ns
275 400 ns
4.8 mJ
50 ns
240 ns
3mJ
280 ns
600 ns
9.6 mJ
0.50 K/W
0.25 K/W
TO-247 AD Outline
∅ P
e
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b
2.87 3.12 .113 .123
2
C .4 . 8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 SMD Outline
Min. Recommended Footprint (Dimensions in inches and (mm))
1. Gate
2. Collector
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 4.90 5.10 .193 .201
L1 2.70 2.90 .106 .114
L2 2.10 2.30 .083 .091
L3 0.00 0.10 .00 .004
L4 1.90 2.10 .075 .083
ØP 3.55 3.65 .140 .144
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 6.15 BSC .242 BSC
3. Emitter
4. Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025