查询IXGH40N30BD1供应商
HiPerFASTTM IGBT
IXGH40N30BD1
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V
P
C
T
J
T
JM
T
stg
TJ= 25°C to 150°C 300 V
TJ= 25°C to 150°C; RGE = 1 MW 300 V
Continuous ±20 V
Transient ±30 V
TC= 25°C60A
TC= 90°C40A
TC= 25°C, 1 ms 160 A
= 15 V, TVJ = 125°C, RG = 10 W ICM = 80 A
GE
CES
TC= 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3) 1.13/10 Nm/lb.in.
V
CES
I
C25
V
CE(sat)
t
fi
= 300 V
= 60 A
= 2.4 V
= 75 ns
TO-247 AD
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
C (TAB)
Features
• International standard package
JEDEC TO-247 AD
• High current IGBT and paralled FRED
in one package
• Low leakage current FRED
• Newest generation HDMOS
TM
process
• MOS Gate turn-on
- drive simplicity
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 250 mA, VGE = 0 V 300 V
IC= 250 mA, VCE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C1mA
CES
GE
TJ = 25°C 200 mA
2.5 5 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.4 V
C90
© 2000 IXYS All rights reserved
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• High power density (two devices in
one package)
• Switching speed for high frequency
applications
• Easy to mount with 1 screw,
(isolated mounting screw hole)
97508C (6/98)
1 - 4
IXGH40N30BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz 210 pF
IC = I
Inductive load, T
IC = I
VCE = 0.8 V
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
Inductive load, T
IC = I
VCE = 0.8 V
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
; VCE = 10 V, 20 28 S
C90
2500 pF
60 pF
145 170 nC
, VGE = 15 V, VCE = 0.5 V
C90
CES
23 35 nC
50 75 nC
= 25°C
J
, VGE = 15 V, L = 100 mH,
C90
C90
, RG = R
CES
= 1.0 W
off
= 125°C
J
G
, VGE = 15 V, L = 100 mH
, RG = R
CES
= 1.0 W
off
G
CES
CES
,
,
25 ns
45 ns
75 ns
75 ns
0.3 mJ
25 ns
45 ns
0.5 mJ
90 180 ns
130 230 ns
0.6 1.4 mJ
0.25 K/W
0.62 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
© 2000 IXYS All rights reserved
IF = I
, VGE = 0 V, 1.8 V
C90
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = I
, VGE = 0 V, -diF/dt = 100 A/ms 1.5 1.8 A
C90
VR = 100 V; TJ =100°C
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ =25°C30 ns
1K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2 - 4
IXGH40N30BD1
100
TJ = 25°C
80
VGE = 15V
13V
11V
60
40
- Amperes
C
I
20
0
012345
VCE - Volts
9 V
7V
5V
200
TJ = 25°C
VGE = 15V
13V
160
120
80
- Amperes
C
I
40
0
0246810
VCE - Volts
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
1.6
VGE = 15V
1.4
= 80A
I
C
1.2
= 40A
I
1.0
- Normalized
IC = 20A
C
0.8
CE (sat)
V
0.6
- Amperes
C
I
100
80
60
40
20
TJ = 125°C
VGE = 15V
13V
11V
9V
7V
5V
11V
9V
7V
5V
0
012345
VCE - Volts
0.4
25 50 75 100 125 150
TJ - Degrees C
Fig. 3. High Temperature Output Characteristics Fig. 4. Temperature Dependence of V
100
V
= 10V
CE
80
60
T
= 125°C
40
- Amperes
C
I
J
TJ = 25°C
20
0
2345678910
VGE - Volts
10000
1000
100
Capacitance - pF
10
0 5 10 15 20 25 30 35 40
VCE-Volts
Fig. 5. Admittance Curves Fig. 6. Capacitance Curves
C
iss
C
oss
C
rss
CE(sat)
f = 1Mhz
)
© 2000 IXYS All rights reserved
3 - 4
IXGH40N30BD1
1.25
TJ = 125°C
RG = 4.7
1.00
E
(ON)
0.75
E
- millijoules
0.50
(ON)
E
0.25
0.00
0 20406080
IC - Amperes
Fig. 7. Dependence of EON and E
18
15
12
9
- Volts
GE
V
6
V
I
CE
C
= 40A
= 150V
OFF
(OFF)
on IC.
2.5
2.0
1.5
1.0
0.5
0.0
(OFF)
(OFF)
(OFF)
(OFF)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
(OFF)
E
- millijoules
1.50
E
- milliJoules
1.25
1.00
TJ = 125°C
E
(ON)
IC = 80A
E
0.75
E
- millijoules
0.50
(ON)
E
0.25
(ON)
IC = 40A
E
(ON)
IC = 20A
E
E
0.00
0 102030405060
RG - Ohms
Fig. 8. Dependence of EON and E
on RG.
OFF
100
10
TJ = -55 to +125°C
RG = 4.7
- Amperes
C
I
1
dV/dt < 5V/ns
3
0
0 25 50 75 100 125 150 175
Qg - nanocoulombs
0.1
0 50 100 150 200 250 300
VCE - Volts
Fig. 9. Gate Charge Fig. 10. Turn-off Safe Operating Area
1
D=0.5
0.1
D=0.2
D=0.1
(K/W)
D=0.05
thJC
D=0.02
Z
0.01
D=0.01
0.001
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
D = Duty Cycle
Pulse Width - Seconds
© 2000 IXYS All rights reserved
Fig. 11. Transient Thermal Resistance
4 - 4
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