IXYS IXGH40N30BD1 Service Manual

查询IXGH40N30BD1供应商

HiPerFASTTM IGBT

IXGH40N30BD1

Symbol Test Conditions Maximum Ratings
V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 30 mH @ 0.8 V

P

C

T

J

T

JM

T

stg

TJ= 25°C to 150°C 300 V
TJ= 25°C to 150°C; RGE = 1 MW 300 V

Continuous ±20 V
Transient ±30 V

TC= 25°C60A
TC= 90°C40A
TC= 25°C, 1 ms 160 A

= 15 V, TVJ = 125°C, RG = 10 W ICM = 80 A

GE

CES

TC= 25°C 200 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Maximum Lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Mounting torque (M3) 1.13/10 Nm/lb.in.

V

CES

I

C25

V

CE(sat)

t

fi

= 300 V
= 60 A
= 2.4 V
= 75 ns

TO-247 AD

G

C

E

G = Gate, C = Collector,
E = Emitter, TAB = Collector

C (TAB)

Features

• International standard package
JEDEC TO-247 AD

• High current IGBT and paralled FRED
in one package

• Low leakage current FRED

• Newest generation HDMOS

TM

process

• MOS Gate turn-on

- drive simplicity

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 250 mA, VGE = 0 V 300 V
IC= 250 mA, VCE = V

VCE= 0.8 • V
VGE= 0 V TJ = 125°C1mA

CES

GE

TJ = 25°C 200 mA

2.5 5 V

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

, VGE = 15 V 2.4 V

C90

© 2000 IXYS All rights reserved

Applications

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode
power supplies

Advantages

• High power density (two devices in
one package)

• Switching speed for high frequency
applications

• Easy to mount with 1 screw,
(isolated mounting screw hole)

97508C (6/98)

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IXGH40N30BD1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C
C
C

Q
Q
Q

t
t
t
t
E

t
t
E
t
t

E
R

R

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

thJC

thCK

IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %

VCE = 25 V, VGE = 0 V, f = 1 MHz 210 pF

IC = I

Inductive load, T

IC = I
VCE = 0.8 V

Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R

Inductive load, T

IC = I
VCE = 0.8 V

Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R

; VCE = 10 V, 20 28 S

C90

2500 pF

60 pF

145 170 nC

, VGE = 15 V, VCE = 0.5 V

C90

CES

23 35 nC
50 75 nC

= 25°C

J

, VGE = 15 V, L = 100 mH,

C90

C90

, RG = R

CES

= 1.0 W

off

= 125°C

J

G

, VGE = 15 V, L = 100 mH

, RG = R

CES

= 1.0 W

off

G

CES

CES

,

,

25 ns
45 ns
75 ns
75 ns

0.3 mJ
25 ns

45 ns

0.5 mJ
90 180 ns

130 230 ns

0.6 1.4 mJ

0.25 K/W

0.62 K/W

TO-247 AD (IXGH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

RM

t

rr

R

thJC

© 2000 IXYS All rights reserved

IF = I

, VGE = 0 V, 1.8 V

C90

Pulse test, t £ 300 ms, duty cycle d £ 2 %
IF = I

, VGE = 0 V, -diF/dt = 100 A/ms 1.5 1.8 A

C90

VR = 100 V; TJ =100°C
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ =25°C30 ns

1K/W

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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