IXYS IXGH40N30S, IXGH40N30BS, IXGH40N30AS, IXGH40N30A, IXGH40N30 Datasheet
...
HiPerFASTTM IGBT
V
CES
I
C25
V
CE(sat)
t
fi
IXGH 40N30/S 300 V 60 A 1.8 V 220ns
IXGH 40N30A/S 300 V 60 A 2.1 V 120ns
IXGH 40N30B/S 300 V 60 A 2.4 V 75 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 30 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
TJ= 25°C to 150°C 300 V
TJ= 25°C to 150°C; R
= 1 MΩ 300 V
GE
Continuous ±20 V
Transient ±30 V
TC= 25°C 60 A
TC= 90°C 40 A
TC= 25°C, 1 ms 160 A
= 15 V, TVJ = 125°C, R
GE
= 10 Ω I
G
= 80 A
CM
CES
TC= 25°C 200 W
-55 ... +150 °C
150 ° C
-55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260 °C
M
d
Mounting torque (M3) 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
TO-247 SMD 4 g
TO-247 SMD*
G
E
C (TAB)
TO-247 AD
C (TAB)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
* Add suffix letter "S" for surface mountable
package
Features
• International standard packages
JEDEC TO-247 AD and surface
mountable TO-247 SMD
• High current handling capability
• Newest generation HDMOS
TM
process
• MOS Gate turn-on
- drive simplicity
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
V
I
CES
I
GES
V
CES
GE(th)
CE(sat)
I
= 250 µA, V
C
I
= 250 µA, V
C
VCE= 0.8 V
VGE= 0 V TJ = 125°C 1 mA
= 0 V 300 V
GE
CES
= V
CE
GE
T
= 25°C 200 µA
J
2.5 5 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC = I
, VGE = 15 V 40N30 1.8 V
C90
40N30A 2.1 V
40N30B 2.4 V
© 2001 IXYS All rights reserved
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• High power density
• Suitable for surface mounting
• Switching speed for high frequency
applications
• Easy to mount with 1 screw,
(isolated mounting screw hole)
97506E(11/01)
IXGH 40N30 IXGH 40N30A IXGH 40N30B
IXGH 40N30S IXGH 40N30AS IXGH 40N30BS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 20 28 S
C90
2500 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 210 pF
60 pF
145 170 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
23 35 nC
50 75 nC
Inductive load, TJ = 25°C
IC = I
, VGE = 15 V,
C90
L = 100 µH,
VCE = 0.8 V
RG = R
CES
= 1.0 Ω
off
,
Switching times may
increase for VCE (Clamp)
> 0.8 V
increased R
, higher TJ or
CES
G
40N30 170 ns
40N30A 100 n s
40N30B 75 ns
40N30 230 ns
40N30A 120 n s
40N30B 75 ns
40N30 1.6 mJ
40N30A 0.75 mJ
25 ns
40 ns
40N30B 0.3 mJ
t
t
E
t
t
E
d(on)
ri
on
d(off)
fi
off
Inductive load, TJ = 125°C
IC = I
, VGE = 15 V,
C90
L = 100 µH
VCE = 0.8 V
RG = R
CES
= 1.0 Ω
off
,
Switching times may
increase for V
> 0.8 V
increased R
(Clamp)
CE
, higher TJ or
CES
G
40N30 250 500 ns
40N30A 150 300 ns
40N30B 90 180 n s
40N30 350 600 ns
40N30A 220 330 ns
40N30B 130 230 n s
40N30 3.3 4.8 mJ
40N30A 1.6 2.4 m J
25 ns
40 ns
0.3 mJ
40N30B 0.6 1.4 mJ
TO-247 AD Outline
1 2 3
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 SMD Outline
R
thJC
R
thCK
Min. Recommended Footprint
(Dimensions in inches and mm)
0.25 K/W
0.62 K/W
1 - Gate 3 - Source (Emitter
2 - Drain (collector) 4 - Drain (collector
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.19 2.13 .075 .084
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BS C .215 BSC
L 4.90 5.10 .193 .201
L1 2.70 2.90 .106 .114
L2 2.10 2.30 .083 .091
L3 0.00 0.10 .000 .004
L4 1.90 2.10 .075 .083
∅P 3.55 3.65 .140 .144
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 6.15 BS C .242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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