IXYS IXGH39N60BS, IXGH39N60B Datasheet
© 1998 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 600 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C76A
I
C90
TC= 90°C39A
I
CM
TC= 25°C, 1 ms 15 2 A
SSOA V
GE
= 15 V, TVJ = 125°C, RG = 22 Ω ICM = 76 A
(RBSOA) Clamped inductive load, L = 30 µH @ 0.8 V
CES
P
C
TC= 25°C 200 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
Maximum lead temperature for soldering 30 0 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-247 SMD 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
IC= 250 µA, VGE = 0 V 600 V
V
GE(th)
IC= 250 µA, VCE = V
GE
2.5 5 V
I
CES
VCE= 0.8 • V
CES
TJ = 25°C 200 µA
VGE= 0 V TJ = 125°C1mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 1.7 V
97548(1/98)
TO-247 SMD
(39N60BS)
C (TAB)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
G
C
E
TO-247 AD
G
E
C (TAB)
HiPerFASTTM IGBT IXGH39N60B V
CES
= 600 V
IXGH39N60BS I
C25
= 76 A
V
CE(sat)
= 1.7 V
t
fi
= 200 ns
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l
High current handling capability
l
Newest generation HDMOSTM process
l
MOS Gate turn-on
- drive simplicity
Applications
l
PFC circuits
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
Advantages
l
High power density
l
Very fast switching speeds for high
frequency applications
Preliminary data
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH39N60B IXGH39N60BS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
fs
IC= I
C90
; VCE = 10 V, 19 28 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
2750 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 200 pF
C
res
50 pF
Q
g
120 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
25 nC
Q
gc
40 nC
t
d(on)
25 ns
t
ri
30 ns
t
d(off)
250 500 ns
t
fi
200 360 ns
E
off
4.0 6.0 mJ
t
d(on)
25 ns
t
ri
30 ns
E
on
0.3 mJ
t
d(off)
360 ns
t
fi
350 ns
E
off
6.0 mJ
R
thJC
0.62 K/W
R
thCK
0.25 K/W
Inductive load, TJ = 25
°°
°°
°C
IC = I
C90
, VGE = 15 V, L = 100 µH,
VCE = 0.8 V
CES
, RG = R
off
= 4.7 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
CES
,
higher TJ or increased R
G
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
Inductive load, TJ = 125
°°
°°
°C
IC = I
C90
, VGE = 15 V, L = 100 µH
VCE = 0.8 V
CES
, RG = R
off
= 4.7 Ω
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 • V
CES
,
higher TJ or increased R
G
1. Gate
2. Collector
3. Emitter
4. Collector
TO-247 SMD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BS C .215 BSC
L 4.90 5.10 .193 .201
L1 2.70 2.90 .106 .114
L2 2.10 2.30 .083 .091
L3 0.00 0.10 .00 .004
L4 1.90 2.10 .075 .083
ØP 3.55 3.65 .140 .144
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 6.15 BSC .242 BS C
Min. Recommended Footprint (Dimensions in inches and (mm))
Loading...