查询IXGH38N60U1供应商
Ultra-Low V
CE(sat)
IXGH 38N60U1 V
IGBT with Diode I
Combi Pack
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C76A
TC= 90°C38A
TC= 25°C, 1 ms 152 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 76 A
GE
CES
TC= 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque (M3) 1.13/10 Nm/lb.in.
CES
C25
V
CE(sat)
= 600 V
= 76 A
= 1.8 V
TO-247 AD
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
l
International standard package
JEDEC TO-247 AD
l
IGBT and anti-parallel FRED in one
package
l
2nd generation HDMOSTM process
l
Low V
CE(sat)
- for minimum on-state conduction
losses
l
MOS Gate turn-on
- drive simplicity
l
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1996 IXYS All rights reserved
IC= 750 µA, VGE = 0 V 600 V
IC= 250 µA, VCE = V
VCE= 0.8 • V
= 0 V TJ = 125°C8mA
V
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 1.8 V
C90
CES
J
GE
TJ = 25°C 500 µ A
min. typ. max.
2.5 5.5 V
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Reduces assembly time and cost
l
High power density
94528B (3/96)
IXGH 38N60U1
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 15 20 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 270 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
= I
, VGE = 15 V, L = 100 µH,
I
C
C90
V
CE
= 0.8 V
, RG = R
CES
°°
°C
°°
= 10 Ω
off
CES
Remarks: Switching times may increase
(Clamp) > 0.8 • V
for V
CE
increased R
G
Inductive load, TJ = 125
I
= I
, VGE = 15 V, L = 100 µH
C
C90
V
CE
= 0.8 V
, RG = R
CES
, higher TJ or
CES
°°
°C
°°
= 10 Ω
off
Remarks: Switching times may increase
for V
(Clamp) > 0.8 • V
CE
increased R
G
, higher TJ or
CES
min. typ. max.
2500 pF
70 pF
125 150 nC
23 35 nC
50 75 nC
30 ns
150 ns
600 1200 ns
500 700 ns
915mJ
40 ns
160 ns
1mJ
800 ns
1000 ns
15 mJ
0.62 K/W
0.25 K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
IF = I
, VGE = 0 V, 1.6 V
C90
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, VGE = 0 V, -diF/dt = 240 A/µs1015A
C90
VR = 360 V TJ =125 °C 150 ns
= 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C35 50ns
I
F
1 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025