IXYS IXGH 38N60 Service Manual
查询IXGH38N60供应商
Ultra-Low V
CE(sat)
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C76A
TC= 90°C38A
TC= 25°C, 1 ms 152 A
= 15 V, TVJ = 125°C, RG = 10 Ω ICM = 76 A
GE
TC= 25°C 200 W
Mounting torque (M3) 1.13/10 Nm/lb.in.
IGBT IXGH 38N60 V
TO-247 AD
G = Gate, C = Collector,
E = Emitter, TAB = Collector
CES
-55 ... +150 °C
150 °C
-55 ... +150 °C
Features
l
l
l
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
l
l
CES
I
C25
V
CE(sat)
G
C
= 600 V
= 76 A
= 1.8 V
E
International standard package
JEDEC TO-247 AD
2nd generation HDMOSTM process
Low V
CE(sat)
- for minimum on-state conduction
losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1996 IXYS All rights reserved
IC= 250 µA, VGE = 0 V 600 V
IC= 250 µA, VCE = V
VCE= 0.8 • V
= 0 V TJ = 125°C1mA
V
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 1.8 V
C90
CES
J
GE
TJ = 25°C 200 µ A
min. typ. max.
2.5 5 V
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Low losses, high efficiency
l
High power density
93025C (7/94)
IXGH 38N60
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 15 20 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 230 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
I
= I
, VGE = 15 V, L = 100 µH,
C
C90
V
= 0.8 V
CE
, RG = R
CES
°°
°C
°°
= 10 Ω
off
Remarks: Switching times may increase
(Clamp) > 0.8 • V
for V
CE
increased R
G
Inductive load, TJ = 125
I
= I
, VGE = 15 V, L = 100 µH
C
C90
V
CE
= 0.8 V
, RG = R
CES
, higher TJ or
CES
°°
°C
°°
= 10 Ω
off
Remarks: Switching times may increase
for V
(Clamp) > 0.8 • V
CE
increased R
G
, higher TJ or
CES
min. typ. max.
CES
2500 pF
70 pF
125 150 nC
23 35 nC
50 75 nC
30 ns
150 ns
600 1200 ns
500 700 ns
915mJ
40 ns
160 ns
1mJ
800 ns
1000 ns
15 mJ
0.62 K/W
0.25 K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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