IXYS IXGH 35N60BU1 Service Manual
查询IXGH32N60BU1供应商
HiPerFASTTM IGBT
with Diode
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
Maximum Lead and Tab temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight 6g
Symbol Test Conditions Characteristic Values
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
T
= 25°C to 150°C 600 V
J
T
= 25°C to 150°C; RGE = 1 MΩ 600 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C60A
C
T
= 90°C32A
C
T
= 25°C, 1 ms 120 A
C
= 15 V, T
GE
T
= 25°C 200 W
C
= 125°C, RG = 33 Ω I
VJ
Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.
(T
I
= 750µA, V
C
I
= 250 µA, V
C
VCE= 0.8 • V
VGE= 0 V T
VCE= 0 V, V
IC= I
, VGE = 15 V 2.3 V
C90
= 0 V 600 V
GE
= V
CE
GE
CES
= ±20 V ±100 nA
GE
T
IXGH 32N60BU1 V
CES
I
C25
V
CE(sat)
t
fi
TO-247 AD
G = Gate, C = Collector,
E = Emitter, TAB = Collector
= 64 A
CM
CES
Features
z
International standard packages
JEDEC TO-247 SMD
z
-55 ... +150 °C
150 °C
-55 ... +150 °C
High frequency IGBT and antiparallel
FRED in one package
z
High current handling capability
z
Newest generation HDMOSTM process
z
MOS Gate turn-on
- drive simplicity
Applications
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
= 25°C, unless otherwise specified)
J
min. typ. max.
Advantages
z
Space savings (two devices in one
package)
z
2.5 5.0 V
= 25°C 500 µA
J
= 125°C8mA
J
High power density
z
Very fast switching speeds for high
frequency applications
= 600 V
= 60 A
= 2.3 V
= 80 ns
G
C
E
C (TAB)
© 2003 IXYS All rights reserved
DS95567C(02/03)
IXGH32N60BU1
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
G
GE
GC
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 15 25 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 270 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
I
= I
, V
C
V
CE
= 0.8 V
= 15 V, L = 100 µH,
C90
GE
, RG = R
CES
off
°°
°C
°°
= 4.7 Ω
CES
Remarks: Switching times may
increase for V
higher TJ or increased R
Inductive load, TJ = 125
IC = I
, V
C90
V
= 0.8 V
CE
(Clamp) > 0.8 • V
CE
°°
°C
°°
= 15 V, L = 100 µH
GE
, RG = R
CES
= 4.7 Ω
off
CES
G
Remarks: Switching times may
increase for V
higher TJ or increased R
(Clamp) > 0.8 • V
CE
G
CES
min. typ. max.
,
,
2700 pF
50 pF
110 150 nC
23 35 nC
40 75 nC
25 ns
20 ns
100 200 ns
80 150 ns
0.6 1.2 m J
25 ns
25 ns
1mJ
120 ns
120 ns
1.2 mJ
0.62 K/W
0.25 K/W
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b
2.87 3.12 .113 .123
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
∅ P
e
Reverse Diode (FRED) Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IF = I
V
F
I
RM
t
rr
R
thJC
, VGE = 0 V, 1.6 V
C90
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, VGE = 0 V, -di
C90
VR = 360 V T
I
= 1 A; -di/dt = 100 A/µs; V
F
/dt = 240 A/µs1015A
F
J
= 30 V T
R
= 125°C 150 ns
J
=25°C35 50ns
J
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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