Advance T echnical Information
HiPerFASTTM IGBT
IXGH 35N120B
IXGT 35N120B
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load @ 0.8 V
P
C
T
J
T
JM
T
stg
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260 °C
TJ= 25°C to 150°C 1200 V
TJ= 25°C to 150°C; RGE = 1 MW 1200 V
Continuous ±20 V
Transient ±30 V
TC= 25°C70A
TC= 90°C35A
TC= 25°C, 1 ms 140 A
= 15 V, TVJ = 125°C, RG = 5 W ICM = 90 A
GE
CES
TC= 25°C 300 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
V
CES
I
C2
V
CE(sat)
t
fi(typ)
= 1200 V
= 70 A
= 3.3 V
= 160 ns
TO-268
(IXGT)
G
E
TO-247 AD (IXGH)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
C (TAB)
C (TAB)
M
d
Mounting torque (M3) 1.13/10 Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 1 mA, VGE = 0 V 1200 V
IC= 750 mA, VCE = V
VCE= V
VGE= 0 V TJ = 125°C5mA
CES
GE
TJ = 25°C 250 mA
2.5 5 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 3.3 V
C90
TJ = 125°C 2.7 V
© 2000 IXYS All rights reserved
• International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
• Low switching losses, low V
(sat)
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)
98665 (11/99)
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IXGH 35N120B
IXGT 35N120B
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz 26 0 pF
IC = I
Inductive load, T
IC = I
VCE = 0.8 V
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
Inductive load, TJ = 125°C
I
= I
C
VCE = 0.8 V
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
; VCE = 10 V, 30 40 S
C90
4620 pF
90 pF
170 nC
, VGE = 15 V, VCE = 0.5 V
C90
CES
28 nC
57 nC
50 ns
27 ns
180 280 ns
, VGE = 15 V
C90
CES
= 25°C
J
, RG = R
= 5 W
off
160 320 ns
,
CES
G
3.8 7.3 mJ
55 ns
, VGE = 15 V
C90
CES
, RG = R
= 5 W
off
G
CES
,
31 ns
2.6 mJ
300 ns
360 ns
8.0 mJ
0.42 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-268AA (D3 PAK)
R
thCK
(TO-247) 0.25 K/W
(TO-268) 0.3 K/W
Min. Recommended Footprint
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
b
1.9 2.1 .75 .83
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
13.3 13.6 .524 .535
E
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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