IXYS IXGT32N60CD1, IXGH32N60CD1 Datasheet

HiPerFASTTM IGBT
with Diode

Light Speed Series

IXGH 32N60CD1
IXGT 32N60CD1

V

CES

I

C25

V

CE(SAT)typ

t

fi(typ)

= 600 V

= 60 A

= 2.1 V
= 55 ns

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 100 mH @ 0.8 V

P

C

T

J

T

JM

T

stg

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C60A
TC= 90°C32A
TC= 25°C, 1 ms 120 A

= 15 V, TVJ = 125°C, RG = 10 W ICM = 64 A

GE

CES

TC= 25°C 200 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Maximum Lead and Tab temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.

Weight TO-247 AD 6 g

TO-268 5 g

TO-247 AD (IXGH)

G

C

E

C (TAB)

TO-268 (D3) ( IXGT)

G

E

C (TAB)

G = Gate C = Collector
E = Emitter

Features

• International standard TO-247AD
package

• High current handling capability

• Latest generation HDMOSTM process

• MOS Gate turn-on

- drive simplicity

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

IC= 250mA, VGE = 0 V 600 V
IC= 250 mA, VCE = V

VCE= 0.8 • V
VGE= 0 V TJ = 125°C3mA

CES

GE

TJ = 25°C 200 mA

2.5 5.0 V

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

, VGE = 15 V 2.1 2.5 V

C90

© 2000 IXYS All rights reserved

Applications

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode
power supplies

• AC motor speed control

• DC servo and robot drives

• DC choppers

Advantages

• High power density

• Very fast switching speeds for high
frequency applications

• High power surface mountable package

97544D (7/00)

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IXGH 32N60CD1
IXGT 32N60CD1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C
C
C

Q
Q
Q

t

d(on)

t
t

d(off)

t
E

t

d(on)

t
E
t

d(off)

t
E

R
R

fs

ies

oes

res

g

ge

gc

ri

fi

off

ri

on

fi

off

thJC

thCK

IC = I

; VCE = 10 V, 25 S

C90

Pulse test, t £ 300 ms, duty cycle £ 2 %

2700 pF

VCE = 25 V, VGE = 0 V, f = 1 MHz 240 pF

50 pF

110 nC

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

CES

22 nC
40 nC

Inductive load, TJ = 150°C

IC = I

, VGE = 15 V, L = 100 mH,

C90

VCE = 0.8 V

, RG = R

CES

= 4.7 W

off

Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R

G

Inductive load, TJ = 125°C

I

= I

, VGE = 15 V, L = 100 mH

C

C90

VCE = 0.8 V

, RG = R

CES

= 4.7 W

off

Remarks: Switching times may
increase for V
higher TJ or increased R

(Clamp) > 0.8 • V

CE

G

CES

CES

,

,

25 ns
20 ns
85 ns
55 ns

0.32 mJ
25 ns

25 ns

1mJ
110 170 ns
100 160 ns

0.85 1.25 mJ

0.62 K/W

0.25 K/W

TO-247 AD (IXGH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845

C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144

E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244

G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177

J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433

L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031

N 1.5 2.49 0.087 0.102

TO-268AA (D3 PAK)

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.
V

F

I

RM

t

rr

R

thJC

IF= I
t £ 300 ms, duty cycle d £ 2 % TJ = 25°C 2.5 V

IF= I
VR= 100 V TJ = 100°C 100 ns
IF= 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C25 ns

, VGE = 0 V, Pulse test TJ =150°C 1.6 V

C90

, VGE = 0 V, -diF/dt = 100 A/ms6A

C90

0.9 K/W

Min. Recommended Footprint

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201
A

2.7 2.9 .106 .114

1

A2.02 .25 .001 .010
b 1.15 1.45 .045 .057

b

1.9 2.1 .75 .83

2

C .4 .65 .016 .026
D 13.80 14.00 .543 .551

E 15.85 16.05 .624 .632

13.3 13.6 .524 .535

E

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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