IXYS IXGH 32N60AU1, IXGH 32N60AU1S Service Manual

查询IXGH32N60AU1供应商

IXGH 32N60AU1
IXGH 32N60AU1S

HiPerFAST

IGBT

with Diode
Combi Pack

Symbol Test Conditions Maximum Ratings

TM

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V

P

C

T

J

T

JM

T

stg

Maximum Lead and Tab temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Weight TO-247 SMD 4 g

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C60A
TC= 90°C32A
TC= 25°C, 1 ms 120 A

= 15 V, TVJ = 125°C, RG = 33 Ω ICM = 64 A

GE

CES

TC= 25°C 200 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.

TO-247 AD 6 g

V

CES

I

C25

V

CE(sat)

t

fi

= 600 V
= 60 A
= 2.9V
= 125 ns

TO-247 SMD
(32N60AU1S)

G

E

C (TAB)

TO-247 AD

G

C

E

G = Gate C = Collector
E = Emitter TAB = Collector

C (TAB)

Features

●

International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD

●

High frequency IGBT and antiparallel
FRED in one package

●

High current handling capability

●

2nd generation HDMOSTM process

●

MOS Gate turn-on

- drive simplicity

Applications

●

AC motor speed control

●

DC servo and robot drives

●

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

J

min. typ. max.

DC choppers

●

Uninterruptible power supplies (UPS)

●

Switched-mode and resonant-mode
power supplies

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

©1996 IXYS Corporation. All rights reserved. 92794H (3/96)

IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: [phone] Fax: [phone]

IC= 750µA, VGE = 0 V 600 V
IC= 250 µA, VCE = V

VCE= 0.8 • V
V

= 0 V TJ = 125°C8mA

GE

CES

GE

TJ = 25°C 500 µA

2.5 5.5 V

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

, VGE = 15 V 2.9 V

C90

Advantages

●

Space savings (two devices in one
package)

●

High power density

●

Suitable for surface mounting

●

Switching speed for high frequency
applications

●

Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)

Edisonstr. 15, D-68623 Lampertheim

Phone: [phone] Fax: [phone]

IXYS Semiconductor GmbH

IXGH 32N60AU1
IXGH 32N60AU1S

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

g

fs

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

t

d(on)

t

ri

t

d(off)

t

fi

E

off

t

d(on)

t

ri

E

on

t

d(off)

t

fi

E

off

R

thJC

R

thCK

J

IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

; VCE = 10 V, 15 20 S

C90

VCE = 25 V, VGE = 0 V, f = 1 MHz 270 pF

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

Inductive load, TJ = 25

= I

, VGE = 15 V, L = 100 µH,

I

C

C90

V

CE

= 0.8 V

, RG = R

CES

off

°°

°C

°°

= 4.7 Ω

CES

Remarks: Switching times may
increase for V
higher T

Inductive load, TJ = 125

= I

, VGE = 15 V, L = 100 µH

I

C

C90

= 0.8 V

V

CE

(Clamp) > 0.8 • V

CE

or increased R

J

, RG = R

CES

G

°°

°C

°°

= 4.7 Ω

off

CES

Remarks: Switching times may
increase for V
higher T

(Clamp) > 0.8 • V

CE

or increased R

J

CES

G

min. typ. max.

,

,

2500 pF

70 pF

125 150 nC

23 35 nC
50 75 nC

25 ns

30 ns
120 200 ns
125 175 ns

1.8 mJ
25 ns

35 ns

1mJ
140 ns
260 ns

4mJ

0.62 K/W

0.25 K/W

TO-247 AD Outline

e

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

A

2.2 2.6 .059 .098

2

b 1.0 1.4 .040 .055
b

1.65 2.13 .065 .084

1

2.87 3.12 .113 .123

b

2

C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

TO-247 SMD Outline

∅ P

Reverse Diode (FRED) Characteristic Values

= 25°C, unless otherwise specified)

(T

Symbol Test Conditions min. typ. max.
V

F

I

RM

t

rr

R

thJC

IF = I

, VGE = 0 V, 1.6 V

C90

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I

, VGE = 0 V, -diF/dt = 240 A/µs1015A

C90

VR = 360 V TJ = 125°C 150 ns
I

= 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C35 50ns

F

J

1 K/W

Min. Recommended Footprint

(Dimensions in inches and mm)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS Corporation
3540 Bassett Street, Santa Clara, CA 95054
Phone: [phone] Fax: [phone]

Phone: [phone] Fax: [phone]

1. Gate

2. Collector

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085

b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084

C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC

L 4.90 5.10 .193 .201
L1 2.70 2.90 .106 .114
L2 2.10 2.30 .083 .091
L3 0.00 0.10 .00 .004
L4 1.90 2.10 .075 .083

ØP 3.55 3.65 .140 .144
Q 5.59 6.20 .220 .244

R 4.32 4.83 .170 .190
S 6.15 BSC .242 BSC

3. Emitter

4. Collector

IXYS Semiconductor GmbH

Edisonstr. 15, D-68623 Lampertheim