IXYS IXGH32N50BU1, IXGH32N50BU1S Service Manual

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Preliminary Data Sheet

HiPerFASTTM IGBT

IXGH32N50BU1
IXGH32N50BU1S

with Diode
Combi Pack

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V

P

C

T

J

T

JM

T

stg

Maximum Lead and Tab temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Weight TO-247 SMD 4 g

TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGE = 1 MΩ 500 V

Continuous ±20 V
Transient ±30 V

TC= 25°C60A
TC= 90°C32A
TC= 25°C, 1 ms 120 A

= 15 V, TVJ = 125°C, RG = 33 Ω ICM = 64 A

GE

CES

TC= 25°C 200 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.

TO-247 AD 6 g

V

CES

I

C25

V

CE(sat)

t

fi

= 500 V
= 60 A
= 2.0 V
= 80 ns

TO-247 SMD
(32N50BU1S)

G

E

C (TAB)

TO-247 AD

C (TAB)

G

C

E

G = Gate, C = Collector,
E = Emitter, TAB = Collector

Features

l

International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD

l

High frequency IGBT and antiparallel
FRED in one package

l

High current handling capability

l

Newest generation HDMOSTM process

l

MOS Gate turn-on

- drive simplicity

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

© 1997 IXYS All rights reserved

IC= 750µA, VGE = 0 V 500 V
IC= 250 µA, VCE = V

VCE= 0.8 • V

= 0 V TJ = 125°C8mA

V

GE

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

, VGE = 15 V 2.0 V

C90

CES

J

GE

TJ = 25°C 500 µA

min. typ. max.

2.5 5.5 V

Applications

l

AC motor speed control

l

DC servo and robot drives

l

DC choppers

l

Uninterruptible power supplies (UPS)

l

Switched-mode and resonant-mode
power supplies

Advantages

l

Space savings (two devices in one
package)

l

High power density

l

Very fast switching speeds for high
frequency applications

95565A (4/97)

IXGH32N50BU1 IXGH32N50BU1S

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g

fs

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

t

d(on)

t

ri

t

d(off)

t

fi

E

off

t

d(on)

t

ri

E

on

t

d(off)

t

fi

E

off

R

thJC

R

thCK

J

IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

; VCE = 10 V, 15 20 S

C90

VCE = 25 V, VGE = 0 V, f = 1 MHz 270 pF

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

Inductive load, TJ = 25

= I

, VGE = 15 V, L = 100 µH,

I

C

C90

V

= 0.8 V

CE

, RG = R

CES

= 4.7 Ω

off

°°

°C

°°

CES

Remarks: Switching times may
increase for V
higher T

Inductive load, TJ = 125

= I

I
V

, VGE = 15 V, L = 100 µH

C

C90

= 0.8 V

CE

(Clamp) > 0.8 • V

CE

or increased R

J

, RG = R

CES

G

°°

°C

°°

= 4.7 Ω

off

CES

Remarks: Switching times may
increase for V
higher T

(Clamp) > 0.8 • V

CE

or increased R

J

CES

G

min. typ. max.

,

,

2500 pF

70 pF

125 150 nC

23 35 nC
50 75 nC

25 ns
30 ns

100 200 ns

80 150 ns

0.7 1.5 mJ
25 ns

35 ns

1mJ
120 ns
120 ns

1.2 mJ

0.62 K/W

0.25 K/W

TO-247 AD Outline

∅ P

e

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

2.2 2.6 .059 .098

A

2

b 1.0 1.4 .040 .055
b

1.65 2.13 .065 .084

1

b

2.87 3.12 .113 .123

2

C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 1 9.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

TO-247 SMD Outline

Reverse Diode (FRED) Characteristic Values

(T

= 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

IF = I

V

F

I

RM

t

rr

R

thJC

, VGE = 0 V, 1.6 V

C90

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I

, VGE = 0 V, -diF/dt = 240 A/µs1015A

C90

VR = 360 V TJ =125°C 150 ns

= 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C35 50ns

I

F

Min. Recommended Footprint (Dimensions in inches and (mm))

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

J

1 K/W

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

1. Gate

2. Collector

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085

b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084

C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC

L 4.90 5.10 .193 .201
L1 2.70 2.90 .106 .114
L2 2.10 2.30 .083 .091
L3 0.00 0.10 .00 .004
L4 1.90 2.10 .075 .083

ØP 3.55 3.65 .140 .144
Q 5.59 6.20 .220 .244

R 4.32 4.83 .170 .190
S 6.15 BSC .242 BSC

3. Emitter

4. Collector