IXYS IXGH32N50B, IXGH32N50BS Service Manual
查询IXGH32N50B供应商
Preliminary Data Sheet
HiPerFASTTM IGBT
IXGH32N50B
IXGH32N50BS
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight TO-247 AD 6 g
TJ= 25°C to 150°C 500 V
TJ= 25°C to 150°C; RGE = 1 MΩ 500 V
Continuous ±20 V
Transient ±30 V
TC= 25°C60A
TC= 90°C32A
TC= 25°C, 1 ms 120 A
= 15 V, TVJ = 125°C, RG = 33 Ω ICM = 64 A
GE
CES
TC= 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque (M3) 1.13/10 Nm/lb.in.
TO-247 SMD 4 g
V
CES
I
C25
V
CE(sat)
t
fi
= 500 V
= 60 A
= 2.0 V
= 80 ns
TO-247 SMD
(32N50BS)
G
E
C (TAB)
TO-247 AD
C (TAB)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
l
International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD
l
High current handling capability
l
Newest generation HDMOSTM process
l
MOS Gate turn-on
- drive simplicity
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1997 IXYS All rights reserved
IC= 250 µA, VGE = 0 V 500 V
IC= 250 µA, VCE = V
VCE= 0.8 • V
V
= 0 V TJ = 125°C1mA
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.0 V
C90
CES
J
GE
TJ = 25°C 200 µA
min. typ. max.
2.5 5 V
Applications
l
PFC circuits
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
Advantages
l
High power density
l
Very fast switching speeds for high
frequency applications
95564A (4/97)
IXGH32N50B IXGH32N50BS
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 15 20 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 230 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
I
= I
, VGE = 15 V, L = 100 µH,
C
C90
V
= 0.8 V
CE
, RG = R
CES
°°
°C
°°
= 4.7 Ω
off
Remarks: Switching times may
increase for V
higher T
J
Inductive load, TJ = 125
I
= I
, VGE = 15 V, L = 100 µH
C
C90
= 0.8 V
V
CE
(Clamp) > 0.8 • V
CE
or increased R
, RG = R
CES
off
G
°°
°C
°°
= 4.7 Ω
CES
Remarks: Switching times may
increase for V
higher T
J
(Clamp) > 0.8 • V
CE
or increased R
CES
G
min. typ. max.
CES
,
,
2500 pF
70 pF
125 150 nC
23 35 nC
50 75 nC
25 ns
30 ns
100 200 ns
80 150 ns
0.7 1.5 mJ
25 ns
35 ns
0.3 mJ
120 ns
120 ns
1.2 mJ
0.62 K/W
0.25 K/W
TO-247 AD Outline
∅ P
e
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
1.65 2.13 .065 .084
b
1
b
2.87 3.12 .113 .123
2
C . 4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 SMD Outline
Min. Recommended Footprint (Dimensions in inches and (mm))
1. Gate
2. Collector
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 4.90 5.10 .193 .201
L1 2.70 2.90 .106 .114
L2 2.10 2.30 .083 .091
L3 0.00 0.10 .00 .004
L4 1.90 2.10 .075 .083
ØP 3.55 3.65 .140 .144
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
S 6.15 BSC .242 BSC
3. Emitter
4. Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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