IXYS IXGT30N60BU1, IXGH30N60BU1 Datasheet

HiPerFASTTM IGBT
with Diode

Combi Pack

IXGH 30N60BU1
IXGT 30N60BU1

V
I

C25

V
t

fi

TO-268
(IXGT)

CES

CE(sat)

= 600 V
= 60 A
= 1.8 V
= 100 ns

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C110

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V

P

C

T

J

T

JM

T

stg

Maximum Lead and Tab temperature for soldering 30 0 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Weight TO-268 4 g

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C60A
TC= 110°C30A
TC= 25°C, 1 ms 12 0 A

= 15 V, TVJ = 125°C, RG = 33 Ω ICM = 60 A

GE

CES

TC= 25°C 200 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.

TO-247 AD 6 g

G

E

TO-247 AD

G

C

E

G = Gate, C = Collector,
E = Emitter, TAB = Collector

Features

C (TAB)

C (TAB)

 International standard packages

JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD

 High frequency IGBT and antiparallel

FRED in one package

 High current handling capability
 Newest generation HDMOS

process

TM

 MOS Gate turn-on

- drive simplicity

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

V

CE(sat)

© 2002 IXYS All rights reserved

IC= 750µA, VGE = 0 V 600 V
BV

temperature coefficient 0.072 %/K

CES

IC= 250 µA, VCE = V
V

temperature coefficient -0.286 %/K

GE(th)

VCE= 0.8 • V
VGE= 0 V TJ = 150°C3mA

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

IC= I

CES

, VGE = 15 V 1.8 V

C110

, VGE = 15 V TJ = 150°C 2.0 V

C110

GE

TJ = 25°C 500 µA

2.5 5.5 V

Applications

 AC motor speed control
 DC servo and robot drives

 DC choppers
 Uninterruptible power supplies (UPS)
 Switched-mode and resonant-mode

power supplies

Advantages

 Space savings (two devices in one

package)

 High power density
 Optimized V

speeds for medium frequency
applications

and switching

CE(sat)

97501E (02/02)

IXGH 30N60BU1
IXGT 30N60BU1

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g

C
C
C

Q
Q
Q

t
t
t
t
E

t
t
E
t
t

E
R

R

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

thJC

thCK

J

IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

; VCE = 10 V, 25 S

C110

VCE = 25 V, VGE = 0 V, f = 1 MHz 240 pF

IC = I

, VGE = 15 V, VCE = 0.5 V

C110

Inductive load, TJ = 25

IC = I
VCE = 0.8 V

, VGE = 15 V, L = 100 µH,

C110

, RG = R

CES

°°

°C

°°

= 4.7 Ω

off

CES

Remarks: Switching times may
increase for V
higher TJ or increased R

Inductive load, TJ = 150

I

= I

, VGE = 15 V, L = 100 µH

C

C110

VCE = 0.8 V

(Clamp) > 0.8 • V

CE

, RG = R

CES

off

G

°°

°C

°°

= 4.7 Ω

CES

Remarks: Switching times may
increase for V
higher TJ or increased R

(Clamp) > 0.8 • V

CE

G

CES

min. typ. max.

,

,

2710 pF

50 pF

110 150 nC

22 35 nC
40 75 nC

25 ns

30 ns
130 220 ns
100 190 ns

1.0 2.0 mJ
25 ns

35 ns

1mJ
200 ns
230 ns

2.5 mJ

0.62 K/W

0.25 K/W

TO-247 AD Outline

e

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055

1.65 2.13 .065 .084

b

1

b22.87 3.12 .113 .123

C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

TO-247 AA (D3 PAK)

∅ P

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

IF = I

V

F

I

RM

t

rr

R

thJC

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

, VGE = 0 V, 1.6 V

C110

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I

, VGE = 0 V, -diF/dt = 240 A/µs1015A

C110

VR = 360 V
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V 35 50 ns

1 K/W

Min Recommended Footprint

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

Dim . Millimeter Inches

Min. Max. Min. Max.

A 4.9 5.1 .193 .201

2.7 2.9 .106 .114

A

1

A2.02 .25 .001 .010

b 1.15 1.45 .045 .057
b

1.9 2.1 .75 .83

2

C .4 .65 .016 .026

D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E

13.3 13.6 .524 .535

1

e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106

L1 1.20 1.40 .047 .055

L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161