IXYS IXGH25N100U1, IXGH25N100AU1 Datasheet
Preliminary data
Low V
High speed IGBT
with Diode
CE(sat)
IXGH25N100U1
IXGH25N100AU1
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGE = 1 MΩ 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C50A
TC= 90°C25A
TC= 25°C, 1 ms 100 A
= 15 V, TVJ = 125°C, RG = 33 Ω ICM = 50 A
GE
CES
TC= 25°C 200 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque (M3) 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
V
CES
I
C25
V
CE(sat)
1000 V 50 A 3.5 V
1000 V 50 A 4.0 V
TO-247 AD (IXGH)
G
C
E
G = Gate C = Collector
E = Emitter TAB = Collector
Features
l International standard package
JEDEC TO-247 AD
l IGBT and anti-parallel FRED in one
package
l 2nd generation HDMOS
l
l
Low V
CE(sat)
- for minimum on-state conduction
losses
l MOS Gate turn-on
- drive simplicity
l Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
TM
process
RM
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1996 IXYS All rights reserved
IC= 4.5 mA, VGE = 0 V 1000 V
IC= 500 µA, VCE = V
VCE= 0.8 • V
V
= 0 V TJ = 125°C8mA
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 25N100U1 3.5 V
C90
CES
J
GE
TJ = 25°C 500 µA
25N100AU1 4.0 V
min. typ. max.
2.5 5.5 V
Applications
l AC motor speed control
l DC servo and robot drives
l DC choppers
l Uninterruptible power supplies (UPS)
l Switch-mode and resonant-mode
power supplies
Advantages
l Saves space (two devices in one
package)
l Easy to mount (isolated mounting
screw hole)
l
l
Reduces assembly time and cost
95587 (9/96)
IXGH25N100U1 IXGH25N100AU1
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 8 15 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 270 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
I
= I
, VGE = 15 V, L = 300 µH,
C
C90
V
= 0.8 V
CE
, RG = R
CES
off
Remarks: Switching times
may increase
for V
(Clamp) > 0.8 • V
CE
higher T
or increased R
J
Inductive load, TJ = 125
I
= I
, VGE = 15 V, L = 300 µH
C
C90
V
= 0.8 V
CE
, RG = R
CES
off
°°
°C
°°
= 33 Ω
CES
G
°°
°C
°°
= 33 Ω
CES
25N100AU1 500 ns
25N100AU1 5 mJ
,
Remarks: Switching times
may increase
for V
(Clamp) > 0.8 • V
CE
higher T
or increased R
J
G
CES
,
25N100U1 950 3000 ns
25N100AU1 800 ns
25N100U1 10 mJ
min. typ. max.
2750 pF
50 pF
130 180 nC
25 60 nC
55 90 nC
100 ns
200 ns
500 ns
100 ns
250 ns
3.5 mJ
720 1000 ns
25N100AU1 6 mJ
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
R
thJC
R
thCK
0.25 K/W
0.62 K/W
Reverse Diode (FRED) Characteristic Values
= 25°C, unless otherwise specified)
(T
Symbol Test Conditions min. typ. max.
V
F
IF = I
, VGE = 0 V, 2.5 V
C90
J
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
IF = I
, VGE = 0 V, -diF/dt = 240 A/µs1618A
C90
VR = 540 V TJ =125°C 120 ns
I
= 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C35 50ns
F
1 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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