IXYS IXGH 24N60BU1 Service Manual
查询IXGH24N60BU1供应商
HiPerFASTTM IGBT
IXGH 24N60BU1 V
with Diode
Symbol Test Conditions Maximum Ratings
T
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
Maximum Lead and Tab temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight 6g
= 25°C to 150°C 600 V
J
T
= 25°C to 150°C; RGE = 1 MΩ 600 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C48A
C
T
= 90°C24A
C
T
= 25°C, 1 ms 96 A
C
= 15 V, T
GE
T
= 25°C 150 W
C
= 125°C, RG = 22 Ω I
VJ
= 48 A
CM
CES
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque 1.13/10 Nm/lb.in.
CES
I
C25
V
CE(sat)
t
fi
= 600 V
= 48 A
= 2.3 V
= 80 ns
TO-247 AD
C (TAB)
G
C
E
G = Gate C = Collector
E = Emitter TAB = Collector
Features
• High frequency IGBT and antiparallel
FRED in one package
• High current handling capability
• 3rd generation HDMOS
TM
process
• MOS Gate turn-on
- drive simplicity
Applications
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2003 IXYS All rights reserved
I
= 750 µA, V
C
I
= 250 µA, V
C
VCE= 0.8 • V
VGE= 0 V T
VCE= 0 V, V
IC= I
GE
, VGE = 15 V 2.3 V
C90
J
= 0 V 600 V
GE
= V
CE
GE
T
CES
= 25°C 500 µA
J
= 125°C8mA
J
= ±20 V ±100 nA
min. typ. max.
2.5 5.5 V
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies
(UPS)
• Switched-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices in one
package)
• High power density
• Suitable for surface mounting
• Switching speed for high frequency
applications
• Easy to mount with 1 screw
(insulated mounting screw hole)
DS95583C(01/03)
IXGH 24N60BU1
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
J
g
fs
IC= I
; VCE = 10 V, 9 13 S
C90
min. typ. max.
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
ies
oes
res
G
GE
GC
d(on)
ri
on
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
VCE = 25 V, VGE = 0 V, f = 1 MHz 175 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
= I
, V
I
C
V
CE
= 0.8 V
= 15 V, L = 100 µH,
C90
GE
, RG = R
CES
off
°°
°C
°°
= 10 Ω
CES
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
Inductive load, T
IC = I
, V
= 15 V, L = 100 µH
C90
VCE = 0.8 V
GE
CES
, RG = R
= 125
J
off
G
°°
°C
°°
= 10 Ω
,
CES
24N60BU1 0.8 mJ
24N60BU1 1.4 mJ
1500 pF
40 pF
90 120 nC
11 15 nC
30 40 nC
25 ns
15 ns
0.6 mJ
150 200 n s
80 150 n s
25 ns
15 ns
0.8 mJ
250 ns
100 ns
TO-247 AD Outline
e
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
2.2 2.54 .087 .102
A
1
A
2.2 2.6 .059 .098
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b
2.87 3.12 .113 .123
2
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
∅ P
R
thJC
R
thCK
0.25 K/W
0.83 K/W
Reverse Diode (FRED) Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IF = I
V
F
I
RM
t
rr
R
thJC
Min. Recommended Footprint (Dimensions in inches and (mm))
, VGE = 0 V, 1.6 V
C90
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, VGE = 0 V, -di
C90
VR = 360 V T
I
= 1 A; -di/dt = 100 A/µs; V
F
/dt = 240 A/µs1015A
F
J
= 30 V T
R
= 125°C 150 ns
J
=25°C35 50ns
J
1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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