IXYS IXGH 24N60AU1, IXGH 24N60AU1S Service Manual

查询IXGH24N60AU1供应商

HiPerFAST

TM

IGBT with Diode

IXGH 24N60AU1
IXGH

24N60AU1S

Combi Pack

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V

P

C

T

J

T

JM

T

stg

Maximum Lead and Tab temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Weight TO-247 SMD 4 g

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C48A
TC= 90°C24A
TC= 25°C, 1 ms 96 A

= 15 V, TVJ = 125°C, RG = 22 Ω ICM = 48 A

GE

CES

TC= 25°C 150 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque, TO-247 AD 1.13/10 Nm/lb.in.

TO-247 AD 6 g

V

CES

I

C25

V

CE(sat)

t

fi

= 600 V
= 48 A
= 2.7 V
= 275 ns

TO-247 SMD
(24N60AU1S)

G

E

C (TAB)

TO-247 AD
(24N60AU1)

G

C

E

G = Gate, C = Collector,
E = Emitter, TAB = Collector

C (TAB)

Features

l

International standard packages
JEDEC TO-247 SMD surface
mountable and JEDEC TO-247 AD

l

IGBT and anti-parallel FRED in one
package

l

2nd generation HDMOSTM process

l

Low V

CE(sat)

- for minimum on-state conduction
losses

l

MOS Gate turn-on

- drive simplicity

l

Fast Recovery Epitaxial Diode (FRED)

- soft recovery with low I

RM

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

©1997 IXYS Corporation. All rights reserved.

IC= 750 µA, VGE = 0 V 600 V
IC= 250 µA, VCE = V

VCE= 0.8 • V

= 0 V TJ = 125°C8mA

V

GE

CES

GE

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

, VGE = 15 V 2.7 V

C90

J

TJ = 25°C 500 µA

min. typ. max.

2.5 5.5 V

Applications

l

AC motor speed control

l

DC servo and robot drives

l

DC choppers

l

Uninterruptible power supplies (UPS)

l

Switch-mode and resonant-mode
power supplies

Advantages

l

Space savings (two devices in one
package)

l

Easy to mount with 1 screw, TO-247
(isolated mounting screw hole)

l

Reduces assembly time and cost

92717H (3/97)

IXGH24N60AU1 IXGH24N60AU1S

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

g

C
C
C

Q
Q
Q

t
t

E
t
t
E

t
t
E

t
t
E

fs

ies
oes
res

g
ge
gc

d(on)
ri

on
d(off)
fi

off

d(on)
ri

on

d(off)

fi

off

J

IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

; VCE = 10 V, 9 13 S

C90

VCE = 25 V, VGE = 0 V, f = 1 MHz 175 pF

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

Inductive load, TJ = 25

= I

, VGE = 15 V, L = 100 µH,

I

C

C90

V

CE

= 0.8 V

, RG = R

CES

°°

°C

°°

= 10 Ω

off

CES

Remarks: Switching times may increase

(Clamp) > 0.8 • V

for V

CE

increased R

G

Inductive load, TJ = 125

= I

, VGE = 15 V, L = 100 µH

I

C

C90

V

= 0.8 V

CE

, RG = R

CES

, higher TJ or

CES

°°

°C

°°

= 10 Ω

off

Remarks: Switching times may increase

(Clamp) > 0.8 • V

for V

CE

increased R

G

, higher TJ or

CES

min. typ. max.

1500 pF

40 pF

90 120 nC
11 15 nC
30 40 nC

25 ns
15 ns

0.6 mJ
150 200 ns
110 270 ns

1.5 mJ

25 ns
15 ns

0.8 mJ
250 ns
400 ns

2.3 mJ

TO-247 AD Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209
A

2.2 2.54 .087 .102

1

A

2.2 2.6 .059 .098

2

b 1.0 1.4 .040 .055
b

1.65 2.13 .065 .084

1

b

2.87 3.12 .113 .123

2

C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177

∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC

∅ P

e

R

thJC

R

thCK

0.25 K/W

0.83 K/W

TO-247 SMD Outline

Reverse Diode (FRED) Characteristic Values

= 25°C, unless otherwise specified)

(T

Symbol Test Conditions min. typ. max.
V

F

I

RM

t

rr

R

thJC

IF = I

, VGE = 0 V, 1.6 V

C90

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I

, VGE = 0 V, -diF/dt = 240 A/µs1015A

C90

VR = 360 V TJ = 125°C 150 ns
I

= 1 A; -di/dt = 100 A/µs; VR = 30 VTJ = 25°C35 50ns

F

Min. Recommended Footprint (Dimensions in inches and (mm))

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

J

1 K/W

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

1. Gate

2. Collector

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205
A1 2.29 2.54 .090 .100
A2 1.91 2.16 .075 .085

b 1.14 1.40 .045 .055
b1 1.91 2.13 .075 .084

C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC

L 4.90 5.10 .193 .201
L1 2.70 2.90 .106 .114
L2 2.10 2.30 .083 .091
L3 0.00 0.10 .00 .004
L4 1.90 2.10 .075 .083

ØP 3.55 3.65 .140 .144
Q 5.59 6.20 .220 .244

R 4.32 4.83 .170 .190
S 6.15 BSC .242 BSC

3. Emitter

4. Collector