IXYS IXGH 24N60A Service Manual

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HiPerFASTTM IGBT IXGH 24N60A V

I
V
t

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V

P

C

T

J

T

JM

T

stg

M

d

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C48A
TC= 90°C24A
TC= 25°C, 1 ms 96 A

= 15 V, TVJ = 125°C, RG = 22 Ω ICM = 48 A

GE

CES

TC= 25°C 150 W

-55 ... +150 °C
150 °C

-55 ... +150 °C

Mounting torque (M3) 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

TO-247 AD

G = Gate, C = Collector,
E = Emitter, TAB = Collector

Features

l

l

l

l

l

CES

C25

CE(sat)

fi

G

= 600 V
= 48 A
= 2.7 V
= 275 ns

C

E

International standard package
JEDEC TO-247 AD
High frequency IGBT
2nd generation HDMOSTM process
High current handling capability
MOS Gate turn-on

- drive simplicity

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

© 1997 IXYS All rights reserved

IC= 250 µA, VGE = 0 V 600 V

IC= 250 µA, VCE = V

VCE= 0.8 • V

= 0 V TJ = 125°C1mA

V

GE

VCE= 0 V, VGE = ±20 V ±100 nA

IC= I

, VGE = 15 V 2.7 V

C90

CES

J

GE

TJ = 25°C 200 µ A

min. typ. max.

2.5 5 V

Applications

l

AC motor speed control

l

DC servo and robot drives

l

DC choppers

l

Uninterruptible power supplies (UPS)

l

Switch-mode and resonant-mode
power supplies

Advantages

l

Easy to mount with 1 screw
(isolated mounting screw hole)

l

Switching speed for high frequency
applications

l

High power density

92730I (3/97)

Symbol Test Conditions Characteristic Values

(T

= 25°C, unless otherwise specified)

J

min. typ. max.

IXGH 24N60A

TO-247 AD Outline

g

C
C
C

Q
Q
Q

t
t
E
t
t
E

t
t
E
t
t
E

R
R

fs

ies

oes

res

g

ge

gc

d(on)

ri

on

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

thJC

thCK

IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

; VCE = 10 V, 9 13 S

C90

1500 pF

VCE = 25 V, VGE = 0 V, f = 1 MHz 135 pF

40 pF
90 120 nC

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

CES

11 15 nC
30 40 nC

Inductive load, TJ = 25

= I

, VGE = 15 V, L = 100 µH,

I

C

C90

V

CE

= 0.8 V

, RG = R

CES

°°

°C

°°

= 10 Ω

off

Remarks: Switching times may increase

(Clamp) > 0.8 • V

for V

CE

increased R

G

Inductive load, TJ = 125

I

= I

, VGE = 15 V, L = 100 µH

C

C90

V

CE

= 0.8 V

, RG = R

CES

, higher TJ or

CES

°°

°C

°°

= 10 Ω

off

Remarks: Switching times may increase

(Clamp) > 0.8 • V

for V

CE

increased R

G

, higher TJ or

CES

25 ns
15 ns

0.6 mJ
150 200 ns
110 270 ns

1.5 mJ

25 ns
15 ns

0.8 mJ
250 ns
400 ns

2.3 mJ

0.25 K/W

1 = Gate
2 = Collector
3 = Emitter
Tab = Collector

0.83 K/W

IXGH 24N60A characteristic curves are located on the
IXGH 24N60AU1 data sheet.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025