IXYS IXGH24N50B, IXGH24N60B Service Manual
查询IXGH24N170供应商
Advance Technical Data
High Voltage
IGBT
IXGH 24N170
IXGT 24N170
Symbol Test Conditions Maximum Ratings
T
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load @ 0.8 V
P
C
T
J
T
JM
T
stg
= 25°C to 150°C 1700 V
J
T
= 25°C to 150°C; RGE = 1 MΩ 1700 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C50A
C
T
= 90°C24A
C
T
= 25°C, 1 ms 150 A
C
= 15 V, T
GE
T
= 25°C 250 W
C
= 125°C, RG = 5 Ω I
VJ
= 50 A
CM
CES
-55 ... +150 °C
150 °C
-55 ... +150 °C
Maximum Lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260 °C
M
d
Mounting torque (M3) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700 V
= 50 A
= 3.3 V
= 290 ns
TO-268 (IXGT)
G
E
TO-247 AD (IXGH)
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
z
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
z
High current handling capability
z
MOS Gate turn-on
- drive simplicity
z
Rugged NPT structure
z
Molding epoxies meet UL 94 V-0
flammability classification
C (TAB)
C (TAB)
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2003 IXYS All rights reserved
I
= 250 µA, V
C
I
= 250 µA, V
C
VCE= 0.8 • V
VGE= 0 V T
VCE= 0 V, V
IC= I
, VGE = 15 V T
C90
J
= 0 V 1700 V
GE
= V
CE
GE
T
CES
= ±20 V ±100 nA
GE
= 25°C50µA
J
= 125°C 500 µA
J
= 25°C 2.5 3.3 V
J
T
= 125°C 3.0 V
J
min. typ. max.
3.0 5.0 V
Applications
z
Capacitor discharge & pulser circuits
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switched-mode and resonant-mode
power supplies
Advantages
z
High power density
z
Suitable for surface mounting
z
Easy to mount with 1 screw,
(isolated mounting screw hole)
DS98994(01/03)
IXGH 24N170
IXGT 24N170
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
I
C(ON)
C
C
C
Q
Q
Q
t
d(on)
t
ri
t
d(off)
t
fi
E
t
d(on)
t
ri
E
t
d(off)
t
fi
E
R
fs
ies
oes
res
g
ge
gc
off
on
off
thJC
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 18 25 S
C90
VGE = 10V, VCE = 10V 100 A
VCE = 25 V, VGE = 0 V, f = 1 MHz 120 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, T
IC = I
, VGE = 15 V
C25
V
CE
= 0.8 V
, RG = R
CES
= 25
J
off
°°
°C
°°
= 5 Ω
CES
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
Inductive load, T
I
= I
, VGE = 15 V
C
C25
VCE = 0.8 V
, RG = R
CES
= 125
J
= 5 Ω
off
°°
°C
°°
G
CES
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
G
CES
min. typ. max.
,
,
2400 pF
33 pF
106 nC
18 nC
32 nC
42 ns
39 ns
200 400 ns
250 500 ns
812mJ
50 ns
55 ns
2.0 mJ
200 ns
360 ns
12 mJ
0.5 K/W
TO-247 AD Outline
e
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
2.2 2.6 .059 .098
A
2
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-268 Outline
∅ P
R
thCK
Min Recommended Footprint
(TO-247) 0.25 K/W
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.9 5.1 .193 .201
A
2.7 2.9 .106 .114
1
A2.02 .25 .001 .010
b 1.15 1.45 .045 .057
1.9 2.1 .75 .83
b
2
C .4 .65 .016 .026
D 13.80 14.00 .543 .551
E 15.85 16.05 .624 .632
E
13.3 13.6 .524 .535
1
e 5.45 BSC .215 BSC
H 18.70 19.10 .736 .752
L 2.40 2.70 .094 .106
L1 1.20 1.40 .047 .055
L2 1.00 1.15 .039 .045
L3 0.25 BSC .010 BSC
L4 3.80 4.10 .150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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