IXYS IXGH17N100U1, IXGH17N100AU1 Datasheet
V
CES
I
C25
V
CE(sat)
Low V
High speed IGBT with Diode IXGH
IGBT with Diode IXGH 17 N100U1 1000 V 34 A 3.5 V
CE(sat)
17 N100AU1 1000 V 34 A 4.0 V
Combi Packs
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 100 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGE = 1 MΩ 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C34A
TC= 90°C17A
TC= 25°C, 1 ms 68 A
= 15 V, TVJ = 125°C, RG = 82 Ω ICM = 34 A
GE
CES
TC= 25°C 150 W
-55 ... +150 °C
150 ° C
-55 ... +150 °C
Mounting torque (M3) 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 ° C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
l
l
l
l
l
l
G
C
E
International standard package
JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOSTM process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IC= 4.5 mA, VGE = 0 V 1000 V
IC= 500 µA, VCE = V
VCE= 0.8 • V
V
= 0 V TJ = 125°C8mA
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 17N100U1 3.5 V
C90
© 1996 IXYS All rights reserved
CES
J
GE
TJ = 25°C 500 µ A
17N100AU1 4.0 V
min. typ. max.
2.5 5.5 V
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Saves space (two devices in one
package)
l
Easy to mount (isolated mounting
screw hole)
l
Reduces assembly time and cost
91754D (3/96)
IXGH 17N100U1
IXGH 17N100AU1
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 6 15 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 210 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, T
= I
, VGE = 15 V, L = 300 µH,
I
C
C90
V
= 0.8 V
CE
, RG = R
CES
= 25
J
°°
°C
°°
= 82 Ω
off
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • V
higher T
or increased R
J
Inductive load, TJ = 125
I
= I
, VGE = 15 V, L = 300 µH
C
C90
V
CE
= 0.8 V
, RG = R
CES
= 82 Ω
off
Remarks: Switching times
may increase
(Clamp) > 0.8 • V
for V
CE
higher T
or increased R
J
G
G
CES
°°
°C
°°
CES
CES
17N100U1 750 ns
,
17N100AU1 450 750 ns
17N100AU1 3 mJ
17N100U1 1200 2000 ns
,
17N100AU1 750 1000 ns
17N100U1 8 m J
17N100AU1 6 mJ
min. typ. max.
1500 pF
40 pF
100 120 nC
20 30 nC
60 90 nC
100 ns
200 ns
500 1000 ns
100 ns
200 ns
2.5 mJ
700 1000 ns
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
R
thJC
R
thCK
0.25 K/W
0.83 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
IF = I
, VGE = 0 V, 2.5 V
C90
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, VGE = 0 V, -diF/dt = 240 A/µs1618A
C90
VR = 540 V TJ =125 °C 120 ns
= 1 A; -di/dt = 100 A/µs; VR = 30 V TJ =25°C35 50ns
I
F
1 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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