IXYS IXGH12N60CD1 Datasheet
HiPerFASTTM IGBT
TM
Lightspeed
Series
IXGH 12N60CD1
I
V
V
CES
C25
CE(sat)
t
fi(typ)
= 600 V
=24 A
= 2.7 V
=55 ns
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
T
= 25°C to 150°C 600 V
J
T
= 25°C to 150°C; RGE = 1 MΩ 600 V
J
Continuous ±20 V
Transient ±30 V
T
= 25°C24A
C
T
= 90°C12A
C
T
= 25°C, 1 ms 48 A
C
= 15 V, T
GE
T
= 25°C 100 W
C
= 125°C, RG = 33 Ω I
VJ
= 24 A
CM
CES
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
l
l
l
l
C (TAB)
G
C
E
Very high frequency IGBT
New generation HDMOSTM process
International standard package
JEDEC TO-247AD
High peak current handling capability
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 2002 IXYS All rights reserved
I
= 250 µA, V
C
I
= 250 µA, V
C
VCE= 0.8 V
VGE= 0 V T
VCE= 0 V, V
IC= I
, VGE = 15 V 2.1 2.7 V
CE90
J
= 0 V 600 V
GE
= V
GE
GE
T
CES
= ±20 V ±100 nA
GE
= 25°C 200 µA
J
= 125°C 1.5 mA
J
min. typ. max.
2.5 5.0 V
Applications
l
PFC circuit
l
AC motor speed control
l
DC servo and robot drives
l
Switch-mode and resonant-mode
power supplies
l
High power audio amplifiers
Advantages
l
Fast switching speed
l
High power density
98623A (2/02)
IXGH 12N60CD1
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 5 11 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 100 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
I
= I
, V
C
VCE = 0.8 V
= 15 V, L = 300 µH
C90
GE
CES
, RG = R
°°
°C
°°
= 18 Ω
off
CES
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 V
increased R
G
Inductive load, TJ = 125
I
= I
, V
C
VCE = 0.8 V
= 15 V, L = 300 µH
C90
GE
CES
, RG = R
, higher TJ or
CES
°°
°C
°°
= 18 Ω
off
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 V
increased R
G
, higher TJ or
CES
IGBT 1.25 K/W
min. typ. max.
860 pF
15 pF
32 nC
10 nC
10 nC
20 ns
20 ns
60 ns
55 ns
0.09 mJ
20 ns
20 ns
0.5 mJ
85 180 ns
85 180 ns
0.27 0.60 mJ
0.25 K/W
TO-247 AD Outline
Dim . Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
2.2 2.54 .087 .102
1
2.2 2.6 .059 .098
A
2
b 1.0 1.4 .040 .055
b
1.65 2.13 .065 .084
1
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
∅ P
e
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
IF = 15A; TVJ = 150°C 1.7 V
TVJ = 25°C 2.5 V
VR = 100 V; IF =25A; -diF/dt = 100 A/µs 2 2.5 A
L < 0.05 µH; TVJ = 100°C
IF = 1 A; -di/dt = 50 A/µs;
VR = 30 V TJ = 25°C35ns
Diode 1.6 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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