IXYS IXGH12N60BD1 Datasheet
HiPerFASTTM IGBT
IXGH 12N60BD1
V
DSS
= 600 V
I
D25
V
t
Preliminary data
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 mH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C24A
TC= 90°C12A
TC= 25°C, 1 ms 48 A
= 15 V, TVJ = 125°C, RG = 33 W ICM = 24 A
GE
CES
TC= 25°C 100 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
Mounting torque with screw M3 0.45/4 Nm/lb.in.
Mounting torque with screw M3.5 0.55/5 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
G = Gate, C = Collector,
E = Emitter, TAB = Collector
CE(sat)
fi(typ)
=24A
= 2.1 V
= 120 ns
G
C
E
C (TAB)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IXYS reserves the right to change limits, test conditions, and dimensions.
IC= 250 mA, VGE = 0 V 600 V
IC= 250 mA, VGE = V
VCE= 0.8 • V
VGE= 0 V TJ = 125°C 1.5 mA
CES
GE
TJ = 25°C 200 mA
2.5 5.0 V
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 2.1 V
CE90
© 2000 IXYS All rights reserved
Features
• Moderate frequency IGBT
• New generation HDMOSTM process
• International standard package
JEDEC TO-247
• High peak current handling capability
and antiparallel diode in one package
Applications
• PFC circuit
• AC motor speed control
• DC servo and robot drives
• Switch-mode and resonant-mode
power supplies
98600B (7/00)
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IXGH 12N60BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
thJC
thCK
IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %
; VCE = 10 V, 5 11 S
C90
860 pF
VCE = 25 V, VGE = 0 V, f = 1 MHz 100 pF
15 pF
32 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
10 nC
10 nC
Inductive load, TJ = 25°C
IC = I
, VGE = 15 V, L = 300 mH
C90
VCE = 0.8 • V
, RG = R
CES
= 18 W
off
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R
G
, higher TJ or
CES
Inductive load, TJ = 125°C
IC = I
, VGE = 15 V, L = 300 mH
C90
VCE = 0.8 • V
, RG = R
CES
= 18 W
off
Remarks: Switching times may increase
for V
(Clamp) > 0.8 • V
CE
increased R
G
, higher TJ or
CES
20 ns
20 ns
150 250 ns
120 270 ns
0.5 0.8 mJ
20 ns
20 ns
0.5 mJ
200 ns
200 ns
0.8 mJ
IGBT 1.25 K/W
0.25 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
© 2000 IXYS All rights reserved
IF = 15A; TVJ = 150°C 1.3 V
TVJ = 25°C 2.5 V
VR = 100 V; IF =25A; -diF/dt = 100 A/ms 2 2.5 A
L < 0.05 mH; TVJ = 100°C
IF= 1 A; -di/dt = 50 A/ms;
VR = 30 V TJ = 25°C35ns
Diode 1.6 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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