IXYS IXGH12N100A, IXGH12N100 Datasheet
1 - 2
© 2000 IXYS All rights reserved
V
CES
I
C25
V
CE(sat)
IXGH 12N100 1000 V 24 A 3.5 V
IXGH 12N100A 1000 V 24 A 4.0 V
Low V
CE(sat)
IGBT
High Speed IGBT
Symbol Test Conditions Maximum Ratings
V
CES
TJ= 25°C to 150°C 1000 V
V
CGR
TJ= 25°C to 150°C; RGE = 1 MW 1000 V
V
GES
Continuous ±20 V
V
GEM
Transient ±30 V
I
C25
TC= 25°C24A
I
C90
TC= 90°C12A
I
CM
TC= 25°C, 1 ms 48 A
SSOA V
GE
= 15 V, TVJ = 125°C, RG = 150 W ICM = 24 A
(RBSOA) Clamped inductive load, L = 300 mH @ 0.8 V
CES
P
C
TC= 25°C 100 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque (M3) 1.13/1 0 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 30 0 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BV
CES
IC= 3 mA, VGE = 0 V 1000 V
BV
CES
temperature coefficient 0.072 %/K
V
GE(th)
IC= 500 mA, VGE = V
GE
2.5 5.5 V
V
GE(th)
temperature coefficient -0.192 %/K
I
CES
VCE= 0.8 V
CES
TJ = 25°C 250 mA
VGE= 0 V TJ = 125°C1mA
I
GES
VCE= 0 V, VGE = ±20 V ±100 nA
V
CE(sat)
IC= I
C90
, VGE = 15 V 12N100 3.5 V
12N100A 4.0 V
G = Gate C = Collector
E = Emitter TAB = Collector
G
C
E
C (TAB)
TO-247AD
95590B(7/00)
Features
• International standard package
JEDEC TO-247 AD
• 2nd generation HDMOS
TM
process
• Low V
CE(sat)
- for low on-state conduction losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Voltage rating guaranteed at high
temperature (125°C)
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
Inductive load, TJ = 25°C
IC = I
C90
, VGE = 15 V, L = 300 mH,
VCE = 0.8 V
CES
, RG = R
off
= 120 W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher TJ or increased R
G
Inductive load, TJ = 125°C
IC = I
C90
, VGE = 15 V, L = 300 mH
VCE = 0.8 V
CES
, RG = R
off
= 120 W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8
V
CES
, higher TJ or increased R
G
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
g
fs
IC= I
C90
; VCE = 10 V, 6 10 S
Pulse test, t £ 300 ms, duty cycle £ 2 %
C
ies
750 pF
C
oes
VCE = 25 V, VGE = 0 V, f = 1 MHz 80 p F
C
res
30 pF
Q
g
65 90 nC
Q
ge
IC = I
C90
, VGE = 15 V, VCE = 0.5 V
CES
820nC
Q
gc
24 45 nC
t
d(on)
100 ns
t
ri
200 ns
t
d(off)
. 850 1000 ns
t
fi
12N100 80 0 1000 ns
12N100A 500 700 ns
E
off
12N100 2.5 mJ
12N100A 1.5 3.0 mJ
t
d(on)
100 ns
t
ri
200 ns
E
on
1.1 mJ
t
d(off)
900 ns
t
fi
12N100 1250 ns
12N100A 950 ns
E
off
12N100 3.5 mJ
12N100A 2.2 mJ
R
thJC
1.25 K/W
R
thCK
0.25 K/W
IXGH12N100/A characteristic curves may be found in the IXGH12N100U/AU1
data sheet.
TO-247 AD (IXGH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
IXGH12N100 IXGH12N100A
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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