IXYS IXGH10N60U1, IXGH10N60AU1 Service Manual
查询IXGH10N60AU1供应商
Low V
High speed IGBT with Diode
Combi Packs
IGBT with Diode
CE(sat)
IXGH10N60U1
IXGH10N60AU1
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C20A
TC= 90°C10A
TC= 25°C, 1 ms 40 A
= 15 V, TVJ = 125°C, RG = 150 Ω ICM = 20 A
GE
CES
TC= 25°C 100 W
-55 ... +150 °C
150 °C
Features
l
l
-55 ... +150 °C
Mounting torque (M3) 1.13/10 Nm/lb.in.
l
l
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
l
l
V
CES
I
C25
V
CE(sat)
600 V 20 A 2.5 V
600 V 20 A 3.0 V
TO-247 AD
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
International standard package
JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOSTM process
Low V
CE(sat)
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode FRED)
- soft recovery with low I
RM
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
© 1996 IXYS All rights reserved
IC= 750 µA, VGE = 0 V 600 V
IC= 500 µA, VCE = V
VCE= 0.8 • V
V
= 0 V TJ = 125°C 2.5 mA
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 10N60U1 2.5 V
C90
CES
J
GE
TJ = 25°C 260 µ A
10N60AU1 3.0 V
min. typ. max.
2.5 5.5 V
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Reduces assembly time and cost
91751G(3/96)
IXGH10N60U1 IXGH10N60AU1
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 4 8 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 125 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
= I
, VGE = 15 V, L = 100 µH
I
C
C90
V
CE
= 0.8 V
, RG = R
CES
off
°°
°C
°°
= 150 Ω
CES
Switching times may increase
(Clamp) > 0.8 • V
for V
CE
higher T
or increased R
J
Inductive load, TJ = 125
= I
, VGE = 15 V, L = 100 µH
I
C
C90
V
CE
Ω
= 0.8 V
, RG = R
CES
CES
G
= 150
off
°°
°C
°°
Switching times may increase
(Clamp) > 0.8 • V
for V
CE
higher T
or increased R
J
CES
G
10N60AU1 300 ns
,
10N60AU1 0.6 m J
10N60U1 570 2000 ns
10N60AU1 360 600 ns
,
10N60U1 2 .0 m J
10N60AU1 1.2 m J
min. typ. max.
750 pF
30 pF
50 70 nC
15 25 nC
25 45 nC
100 ns
200 ns
0.4 mJ
600 ns
100 ns
200 ns
1mJ
900 1500 ns
1.25 K/W
0.25 K/W
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Reverse Diode (FRED) Characteristic Values
(T
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IF = I
V
F
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
, VGE = 0 V, 1.75 V
C90
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, VGE = 0 V, -diF/dt = 64 A/µs 2.5 A
C90
VR = 360 V TJ =100 °C 165 ns
= 1 A; -di/dt = 50 A/µs; VR = 30 V TJ =25°C35 50ns
I
F
J
2.5 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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