IXYS IXGH 10 N100U1, IXGH 10 N100AU1 Service Manual
查询IXGH10N100AU1供应商
Low V
High speed IGBT with Diode IXGH
IGBT with Diode IXGH 10 N100U1 1000 V 20 A 3.5 V
CE(sat)
10 N100AU1 1000 V 20 A 4.0 V
Combi Packs
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA V
(RBSOA) Clamped inductive load, L = 300 µH @ 0.8 V
P
C
T
J
T
JM
T
stg
M
d
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TJ= 25°C to 150°C 1000 V
TJ= 25°C to 150°C; RGE = 1 MΩ 1000 V
Continuous ±20 V
Transient ±30 V
TC= 25°C20A
TC= 90°C10A
TC= 25°C, 1 ms 40 A
= 15 V, TVJ = 125°C, RG = 150 Ω ICM = 20 A
GE
CES
TC= 25°C 100 W
-55 ... +150 °C
150 °C
Features
l
l
-55 ... +150 °C
Mounting torque (M3) 1.13/10 Nm/lb.in.
l
l
l
l
V
CES
I
C25
V
CE(sat)
TO-247 AD
G
C
E
G = Gate, C = Collector,
E = Emitter, TAB = Collector
International standard package
JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOSTM process
Low V
CE(sat)
- for low on-state conduction losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Symbol Test Conditions Characteristic Values
(T
= 25°C, unless otherwise specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
IC= 4 mA, VGE = 0 V 1000 V
IC= 500 µA, VCE = V
VCE= 0.8 • V
V
= 0 V TJ = 125°C5mA
GE
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
, VGE = 15 V 10N100U1 3.5 V
C90
© 1997 IXYS All rights reserved
CES
J
GE
TJ = 25°C 400 µ A
10N100AU1 4.0 V
min. typ. max.
2.5 5.5 V
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switch-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
Easy to mount with 1 screw
(isolated mounting screw hole)
l
Reduces assembly time and cost
91753F (3/97)
IXGH 10N100U1
IXGH 10N100AU1
Symbol Test Conditions Characteristic Values
= 25°C, unless otherwise specified)
(T
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
J
IC= I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
; VCE = 10 V, 4 8 S
C90
VCE = 25 V, VGE = 0 V, f = 1 MHz 200 pF
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
Inductive load, TJ = 25
= I
, VGE = 15 V, L = 300 µH,
I
C
C90
V
CE
= 0.8 V
, RG = R
CES
°°
°C
°°
= 150 Ω
off
Remarks: Switching times
may increase
(Clamp) > 0.8 • V
for V
CE
higher T
or increased R
J
Inductive load, TJ = 125
I
= I
, VGE = 15 V, L = 300 µH
C
C90
V
CE
= 0.8 V
, RG = R
CES
= 150 Ω
off
Remarks: Switching times
may increase
(Clamp) > 0.8 • V
for V
CE
higher T
or increased R
J
G
G
CES
°°
°C
°°
CES
CES
10N100U1 800 ns
,
10N100AU1 500 ns
10N100AU1 2 3 mJ
10N100U1 1250 2000 ns
,
10N100AU1 600 1000 ns
10N100U1 5.0 mJ
10N100AU1 2.5 mJ
min. typ. max.
750 pF
30 pF
52 70 nC
13 25 nC
24 45 nC
100 ns
200 ns
550 900 ns
100 ns
200 ns
1.1 mJ
600 1000 ns
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
R
thJC
R
thCK
0.25 K/W
1.2 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
IF = I
, VGE = 0 V, 2.75 V
C90
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IF = I
, VGE = 0 V, -diF/dt = 100 A/µs 6.5 A
C90
VR = 540 V TJ =125 °C 120 ns
= 1 A; -di/dt = 50 A/µs; VR = 30 V TJ =25°C50 60ns
I
F
1.6 K/W
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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