IXYS IXGE200N60B Datasheet

Advance Technical Information

HiPerFASTTM IGBT

IXGE 200N60B V

E

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 30 µH @ 0.8 V

P

C

T

J

T

JM

T

stg

V

ISOL

M

d

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C 175 A
TC= 90°C 112 A
TC= 25°C, 1 ms 40 0 A

= 15 V, TVJ = 125°C, RG = 2.4 Ω ICM = 200 A

GE

CES

TC= 25°C 500 W

-40 ... +150 °C
150 °C

-40 ... +150 °C

50/60 Hz t = 1 min 2500 V~
I

≤ 1 mA t = 1 s 3000 V~

ISOL

Mounting torque 1.5/13 Nm/lb.in.
Terminal connection torque (M4) 1.5/13 Nm/lb.in.

Weight 19 g

CES

I

C25

V

CE(sat)

ISOPLUS 227

TM

= 600 V
= 175 A
= 2.1 V

(IXGE)

G

E Q

E Q

C

G = Gate, E = Emitter, C = Collector

Q either emitter terminal can be

used as Main or Kelvin Emitter

Features

•Conforms to SOT-227B outline

•Isolation voltage 3000 V~

•Very high current, fast switching IGBT

•Low V

CE(sat)

- for minimum on-state conduction
losses

•MOS Gate turn-on

- drive simplicity

•Low collector-to-case capacitance

(< 50 pF)

•Low package inductance (< 5 nH)

- easy to drive and to protect

Symbol Test Conditions Characteristic Values

= 25°C, unless otherwise specified)

(T

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

© 2002 IXYS All rights reserved

IC= 1 mA , VGE = 0 V 600 V
IC= 1 mA, VCE = V

VCE= V
VGE= 0 V TJ = 125°C 2 mA

CES

VCE= 0 V, VGE = ±20 V ±400 nA
IC= 120A, VGE = 15 V 2.1 V

J

GE

TJ = 25°C 200 µA

min. typ. max.

2.5 5.5 V

Applications

•AC motor speed control

•DC servo and robot drives

•DC choppers

•Uninterruptible power supplies (UPS)

•Switch-mode and resonant-mode

power supplies

Advantages

•Easy to mount with 2 screws

•Space savings

•High power density

98911 (2/02)

IXGE 200N60B

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

fs

IC= 60 A; VCE = 10 V, 50 75 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %

C
C
C

Q
Q
Q

t
t
E
t

t
E

t
t
E
t
t
E

ies

oes

res

g

ge

gc

d(on)

ri

on

d(off)

ri

off

d(on)

ri

on

d(off)

ri

off

VCE = 25 V, VGE = 0 V, f = 1 MHz 680 pF

IC = 120A, VGE = 15 V, VCE = 0.5 V

Inductive load, TJ = 25

I

= 100A, VGE = 15 V

C

V

= 0.8 V

CE

, RG = R

CES

°°

°C

°°

= 2.4 Ω

off

CES

Remarks: Switching times
may increase for
VCE (Clamp) > 0.8 • V
higher TJ or increased R

Inductive load, TJ = 125

CES

,

G

°°

°C

°°

IC =100A, VGE = 15 V
VCE = 0.8 V

, RG = R

CES

= 2.4 Ω

off

Remarks: Switching times
may increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R

G

CES

,

11000 pF

190 pF
350 nC

72 nC

131 nC

60 ns
45 ns

2.4 mJ
200 360 ns
160 280 ns

5.5 9.6 mJ

60 ns
60 ns

4.8 mJ
290 ns
250 ns

8.7 mJ

SOT-227B miniBLOC

R

thJC

R

thCK

0.07 K/W

0.25 K/W

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025