IXYS IXGB75N60BD1 Datasheet
ADVANCE TECHNICAL INFORMATION
HiPerFAST
TM
IXGB 75N60BD1
IGBT with Diode
Symbol Test Conditions Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MΩ 600 V
Continuous ±20 V
Transient ±30 V
TC= 25°C 120 A
TC= 90°C75A
TC= 25°C, 1 ms 300 A
V
CES
I
C25
V
CE(sat)
t
fi
PLUS 264
G = Gate C = Collector
E = Emitter Tab = Collector
= 600 V
= 120 A
= 2.3 V
= 150 ns
G
C
E
(TAB)
SSOA VGE= 15 V, TVJ = 125°C, RG = 5 Ω ICM = 100 A
(RBSOA) @ 0.8 V
P
C
T
J
T
JM
T
stg
Weight 10 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
TC= 25°C 360 W
-55 ... +150 °C
-55 ... +150 °C
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IC= 1 mA, VGE = 0 V 600 V
IC= 500 µA, VCE = V
VCE= V
VGE= 0 V TJ = 125°C5mA
VCE= 0 V, VGE = ±20 V ±100 nA
IC= I
Note1
CES
, VGE = 15 V 2.3 V
C90
GE
2.5 5.5 V
CES
150 °C
650 µA
Features
• High current handling capability in
holeless TO-264 package
• High frequency IGBT and antparallel
FRED in one package
• New generation HDMOS
TM
process
• MOS Gate turn-on fordrive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low I
Applications
RM
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
power supplies
Advantages
• Space savings (two devices on one
package
• Easy spring or clip mounting
© 2001 IXYS All rights reserved
98850 (8/01)
IXGB 75N60BD1
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
fs
ies
oes
res
g
ge
gc
d(on)
ri
d(off)
fi
off
d(on)
ri
on
d(off)
fi
off
IC= 60A; VCE = 10 V, 45 60 S
Note1
5300 pF
VCE= 25 V, VGE = 0 V, f = 1 MHz 730 pF
190 pF
248 nC
IC = I
, VGE = 15 V, VCE = 0.5 V
C90
CES
40 nC
76 nC
Inductive load, TJ = 25
I
= I
, VGE = 15 V
C
C90
VCE = 0.8 V
, RG = R
CES
°°
°C
°°
= 5 Ω
off
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • V
higher TJ or increased R
G
CES
,
62 ns
57 ns
220 400 ns
150 270 ns
3.3 6 mJ
63 ns
= 5 Ω
off
G
°°
°C
°°
CES
70 ns
5mJ
330 ns
270 ns
,
6.0 mJ
Inductive load, TJ = 125
IC = I
, VGE = 15 V
C90
VCE = 0.8 V
, RG = R
CES
Remarks: Switching times may
increase for V
higher TJ or increased R
(Clamp) > 0.8 • V
CE
PLUS 264 OUTLINE
R
thJC
R
thCK
0.35 K/W
0.19 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
RM
t
rr
R
thJC
IF = 60A, VGE = 0 V, TJ = 150°C 1.6 V
Note1 TJ = 25°C 2.5 V
IF = I
VR = 100 V 175 ns
, VGE = 0 V, -diF/dt = 100 A/us 2 2.5 A
C90
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 50 ns
0.65 K/W
Notes:
1. Pulse test, t
< 300µs,duty cycle < 2%
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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