IXYS IXGA7N60CD1, IXGP7N60CD1 Datasheet

Advanced T echnical Information

HiPerFASTTM IGBT
with Diode

IXGA 7N60CD1
IXGP 7N60CD1

LightspeedTM Series

Symbol Test Conditions Maximum Ratings

V

CES

V

CGR

V

GES

V

GEM

I

C25

I

C90

I

CM

SSOA V
(RBSOA) Clamped inductive load, L = 300 mH @ 0.8 V

P

C

T

J

T

JM

T

stg

Maximum lead temperature for soldering 300 °C

1.6 mm (0.062 in.) from case for 10 s

M

d

Weight TO-220 4 g

TJ= 25°C to 150°C 600 V
TJ= 25°C to 150°C; RGE = 1 MW 600 V

Continuous ±20 V
Transient ±30 V

TC= 25°C 14 A
TC= 90°C 7 A
TC= 25°C, 1 ms 30 A

= 15 V, TVJ = 125°C, RG = 22 W ICM = 14 A

GE

CES

TC= 25°C 54 W

-55 ... +150 °C

150 °C

-55 ... +150 °C

Mounting torque, (TO-220) M3 0.45/4Nm/lb.in.

M3.5 0.55/5Nm/lb.in.

TO-263 2 g

V

CES

I

C25

V

CE(sat)typ

t

fi

TO-220AB (IXGP)

TO-263 AA (IXGA)

G = Gate, C = Collector,
E = Emitter, TAB = Collector

Features

• International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB

• High frequency IGBT

• High current handling capability

• HiPerFAST

• MOS Gate turn-on

- drive simplicity

= 600 V
= 14 A
= 2.0 V
= 45ns

G

C

E

G

E

TM

HDMOSTM process

C (TAB)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

BV

CES

V

GE(th)

I

CES

I

GES

V

CE(sat)

IXYS reserves the right to change limits, test conditions, and dimensions.

© 2000 IXYS All rights reserved

IC= 250 mA, VGE = 0 V 600 V
IC= 250 mA, VCE = V

VCE= 0.8 • V
VGE= 0 V TJ = 125°C 750 mA

VCE= 0 V, VGE = ±20 V ±100 nA
IC= I

CES

, VGE = 15 V 2.0 2.5 V

C90

GE

TJ = 25°C 100 mA

2.5 5.5 V

Applications

• Uninterruptible power supplies (UPS)

• Switched-mode and resonant-mode
power supplies

• AC motor speed control

• DC servo and robot drives

• DC choppers

Advantages

• High power density

• Suitable for surface mounting

• Very low switching losses for high
frequency applications

98720 (05/01/2000)

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IXGA 7N60CD1
IXGP 7N60CD1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

g

C
C
C

Q
Q
Q

t
t
t
t
E

t
t
E
t
t
E

R
R

fs

ies

oes

res

g

ge

gc

d(on)

ri

d(off)

fi

off

d(on)

ri

on

d(off)

fi

off

thJC

thCK

IC= I
Pulse test, t £ 300 ms, duty cycle £ 2 %

; VCE = 10 V, 3 7 S

C90

500 pF

VCE = 25 V, VGE = 0 V, f = 1 MHz 50 pF

17 pF
25 nC

IC = I

, VGE = 15 V, VCE = 0.5 V

C90

CES

15 nC
10 nC

Inductive load, TJ = 25°C

IC = I

, VGE = 15 V, L = 300 mH

C90

VCE = 0.8 • V

, RG = R

CES

= 18 W

off

Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • V
increased R

G

, higher TJ or

CES

Inductive load, TJ = 125°C

IC = I

, VGE = 15 V, L = 300 mH

C90

VCE = 0.8 • V

, RG = R

CES

= 18 W

off

Remarks: Switching times may increase
for V

(Clamp) > 0.8 • V

CE

increased R

G

, higher TJ or

CES

10 ns
10 ns
65 130 ns
45 110 ns

0.12 0.25 mJ
10 ns

15 ns

0.15 mJ

120 ns

85 ns

0.22 mJ

IGBT 2.3 K/W

0.25 K/W

TO-263 AA (IXGA) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110

b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055

c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320

E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015

R 0.46 0.74 .018 .029

TO-220 AB (IXGP) Outline

Reverse Diode (FRED) Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

V

F

I

RM

t

rr

R

thJC

IF = 10A; TVJ = 150°C 1.96 V

TVJ = 25°C 2.95 V

VR = 100 V; IF =25A; -diF/dt = 100 A/ms 2 2.5 V
L < 0.05 mH; TVJ = 100°C

IF = 1 A; -di/dt = 50 A/ms;
VR = 30 V TJ = 25°C35ns

Diode 1.6 K/W

Min. Recommended Footprint

Dim. Millimeter Inches

Min. Max. Min. Max.

A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630

C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161

E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125

G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230

J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BS C

M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055

Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110

© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

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